NVMFS5832NL Power MOSFET
Features
40 V, 4.2 mW, 120 A, Single N−Channel
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices
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V(BR)DSS 40 V Value 40 ± 20 120 84 Unit V V A D (5,6) RDS(ON)...
