Power Transistor. 2SD1912 Datasheet

2SD1912 Transistor. Datasheet pdf. Equivalent

Part 2SD1912
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(M.
Manufacture Inchange Semiconductor
Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emit 2SD1912 Datasheet
Recommendation Recommendation Datasheet 2SD1912 Datasheet




2SD1912
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Wide Area of Safe Operation
·Low Collector Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
2SD1912
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
8
A
1.75
W
30
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
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2SD1912
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
2SD1912
MIN TYP. MAX UNIT
60
V
60
V
6
V
1.0
V
1.0
V
100 μA
100 μA
70
280
20
40
pF
100
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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