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2SD1912

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SD1912 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSO...

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