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BSB028N06NN3G

Infineon
Part Number BSB028N06NN3G
Manufacturer Infineon
Description n-Channel Power MOSFET
Published Dec 10, 2013
Detailed Description BSB028N06NN3 G OptiMOS™3 Power-MOSFET Features • Optimized technology for DC/DC converters • Excellent gate charge x R ...
Datasheet PDF File BSB028N06NN3G PDF File

BSB028N06NN3G
BSB028N06NN3G

Overview
BSB028N06NN3 G OptiMOS™3 Power-MOSFET Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • Dual sided cooling • low parasitic inductance Product Summary VDS RDS(on),max ID 60 2.
8 90 CanPAKTM M MG-WDSON-2 • Low profile (<0.
7mm) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Compatible with DirectFET® package MN footprint and outline2) V mW A Type BSB028N06NN3 G Package MG-WDSON-2 Outline MN Marking 0106 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Conti...


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