BSZ440N10NS3 G
OptiMOS™3 Power-Transistor
Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for targ...