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PM200RSD060 PM200RSD060
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE
PM200RSD060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1. 7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM. • 3φ 150A, 600V Current-sense IGBT for 15kHz switching • 75A, 600V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic •...
PM200RSD060 PDF File
