Recovery Rectifier. MUR1660E Datasheet

MUR1660E Rectifier. Datasheet pdf. Equivalent

Part MUR1660E
Description (MUR1605 - MUR1660) 16.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier
Feature MUR1605 thru MUR1660 ® Pb Pb Free Plating Product MUR1605 thru MUR1660 TO-220AB .419(10.66) .387(.
Manufacture Thinki Semiconductor
Datasheet
Download MUR1660E Datasheet



MUR1660E
MUR1605 thru MUR1660
®
MUR1605 thru MUR1660
Pb Free Plating Product
Pb
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on diode body
Mounting position: Any
Weight: 2.03 grams
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "CT"
Case
Negative
Common Anode
Suffix "CA"
Case
Doubler
Series Connection
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT"
Common Anode Suffix "CA"
Anode and Cathode Coexistence Suffix "GD"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT
SYMBOL MUR1605CA MUR1610CA MUR1620CA MUR1630CA MUR1640CA MUR1660CA UNIT
MUR1605GD MUR1610GD MUR1620GD MUR1630GD MUR1640GD MUR1660GD
VRRM
50
100 200 300 400 600 V
VRMS
35
70 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150 A
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98 1.3
10.0
250
35
90
2.2
-55 to + 150
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



MUR1660E
MUR1605 thru MUR1660
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
MUR1605-MUR1620
MUR1630-MUR1640
1.0
MUR1660
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200
175
150
125
100
75
50
25
0
1
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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