RECOVERY RECTIFIERS. BYV26E Datasheet

BYV26E RECTIFIERS. Datasheet pdf. Equivalent

Part BYV26E
Description (BYV26A - BYV26G) 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS
Feature BYV26A thru BYV26G ® Pb Free Plating Product BYV26A thru BYV26G 1.0 AMP.ULTRA FAST RECOVERY RECTI.
Manufacture Thinki Semiconductor
Datasheet
Download BYV26E Datasheet



BYV26E
BYV26A thru BYV26G
®
BYV26A thru BYV26G
Pb Free Plating Product
1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS
Pb
Features
D Glass passivated junction
D Hermetically sealed package
D Very low switching losses
D Low reverse current
D High reverse voltage
Applications
SOD-57
Unit: inch(mm)
Switched mode power supplies
High–frequency inverter circuits
94 9539
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Symbol BYV
26A
VRRM 200V
BYV
26B
400V
BYV BYV
26C 26D
600V 800V
BYV BYV Units
26E 26G
1000V 1400V V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@TA = 55 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Reverse Recovery Time (Note 1)
Maximum DC Reverse Current @ TA=25 oC
at Rated DC Blocking Voltage @ TA=150 oC
Maximum Instantaneous Forward Voltage
@ 1.0A @
@ 1.0A @
TTAA==2157o5CoC
Maximum Reverse recovery Current Slope
dIr/dt @ IF=1A, VR=30V, dIf/dt = 1A / uS
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
VDC
I(AV)
IFSM
Trr
IR
VF
dv/dt
Cj
RθJA
TJ
TSTG
300V 500V 700V 900V 1100V 1500V V
1.0 A
30
30 75
5.0
100
2.5
1.3
7
45
40
-55 to +175
-55 to +175
A
nS
uA
uA
V
A/uS
pF
oC /W
oC
oC
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



BYV26E
BYV26A thru BYV26G
®
Characteristics (Tj = 25_ C unless otherwise specified)
600 1000
500 RthJA=45K/W
400
RthJA=100K/W
300
200
100
VR=1000V
800V
600V
400V
200V
0
0
95 9728
40 80 120 160
Tj – Junction Temperature ( °C )
200
100
10
1
0.1
0
95 9729
VR = VR RM
40 80 120 160
Tj – Junction Temperature ( °C )
200
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 2. Max. Reverse Current vs.
Junction Temperature
1.2
1.0
0.8
RthJA=45K/W
L=10mm
0.6
0.4
RthJA=100K/W
0.2 PCB
0
0
95 9730
40 80 120 160 200
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
10
Tj = 175°C
1
Tj = 25°C
0.1
0.01
0.001
0
95 9731
123 4 56
VF – Forward Voltage ( V )
7
Figure 4. Max. Forward Current vs. Forward Voltage
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/







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