2SK4101FG MOSFET Datasheet

2SK4101FG Datasheet, PDF, Equivalent


Part Number

2SK4101FG

Description

N-Channel Silicon MOSFET

Manufacture

Sanyo

Total Page 6 Pages
Datasheet
Download 2SK4101FG Datasheet


2SK4101FG
Ordering number : ENA1365
2SK4101FG
SANYO Semiconductors
DATA SHEET
2SK4101FG
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
650 V
Gate-to-Source Voltage
Drain Current (DC)
VGSS
IDc *1
IDpack *2
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYOs ideal heat dissipation condition)*3
±30 V
7A
6.4 A
Drain Current (Pulse)
Allowable Power Dissipation
IDP PW10μs, duty cycle1%
PD Tc=25°C (SANYOs ideal heat dissipation condition)*3
28 A
2.0 W
35 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
194 mJ
6A
Note :*1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6A
*5 L10mH, Single pulse
Marking : K4101
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
N2608QB MS IM TC-00001729 No. A1365-1/6
Free Datasheet http://www.datasheet4u.com/

2SK4101FG
Electrical Characteristics at Ta=25°C
2SK4101FG
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=520V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3.5A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=200V, VGS=10V, ID=7A
VDS=200V, VGS=10V, ID=7A
VDS=200V, VGS=10V, ID=7A
IS=7A, VGS=0V
Package Dimensions
unit : mm (typ)
7529-001
10.16
3.18
4.7
2.54
min
650
Ratings
typ
3
2.3 4.6
0.85
750
136
28
21
40
89
31
28.5
5.2
16
0.9
max
100
±100
5
1.1
1.2
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
1.47 MAX
0.8
123
2.54 2.54
2.76
DETAIL-A
(0.84)
0.5 1 : Gate
FRAME 2 : Drain
EMC 3 : Source
SANYO : TO-220F-3SG
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.0.5%
VDD=200V
ID=3.5A
RL=57Ω
VOUT
D
G
P.G
RGS=50Ω
S 2SK4101FG
Avalanche Resistance Test Circuit
50Ω
RG
L
2SK4101FG
10V
0V
50Ω
VDD
No. A1365-2/6
Free Datasheet http://www.datasheet4u.com/


Features Ordering number : ENA1365 2SK4101FG SA NYO Semiconductors DATA SHEET 2SK4101 FG Features • • • • N-Channel Silicon MOSFET General-Purpose Switchi ng Device Applications Low ON-resistan ce, low input capacitance, ultrahigh-sp eed switching. Adoption of high reliabi lity HVP process. Attachment workabilit y is good by Mica-less package. Avalanc he resistance guarantee. Specificatio ns Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate -to-Source Voltage Drain Current (DC) D rain Current (Pulse) Allowable Power Di ssipation Channel Temperature Storage T emperature Avalanche Energy (Single Pul se) *4 Avalanche Current *5 Symbol VDSS VGSS IDc *1 IDpack *2 IDP PD Tch Tstg EAS IAV Limited only by maximum tempera ture Tch=150°C Tc=25°C (SANYO’s ide al heat dissipation condition)*3 PW≤1 0μs, duty cycle≤1% Tc=25°C (SANYO s ideal heat dissipation condition)*3 Conditions Ratings 650 ±30 7 6.4 28 2. 0 35 150 --55 to +150 194 6 Unit V V A A A W W °C °C mJ A Note : *1 Shows chip capabil.
Keywords 2SK4101FG, datasheet, pdf, Sanyo, N-Channel, Silicon, MOSFET, SK4101FG, K4101FG, 4101FG, 2SK4101F, 2SK4101, 2SK410, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)