TSHF6210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
FEATURES
Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pul...
