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IPD80N04S3-06

Infineon
Part Number IPD80N04S3-06
Manufacturer Infineon
Description Power-Transistor
Published Jan 13, 2014
Detailed Description IPD80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 40 5.2 90 V mΩ A Features • N-channel ...
Datasheet PDF File IPD80N04S3-06 PDF File

IPD80N04S3-06
IPD80N04S3-06

Overview
IPD80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 40 5.
2 90 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-11 Type IPD80N04S3-06 Package PG-TO252-3-11 Marking QN0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V...


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