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AP40T03GH. 40T03GH Datasheet

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AP40T03GH. 40T03GH Datasheet






40T03GH AP40T03GH. Datasheet pdf. Equivalent




40T03GH AP40T03GH. Datasheet pdf. Equivalent





Part

40T03GH

Description

AP40T03GH



Feature


AP40T03GH/J RoHS-compliant Product Adva nced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHANNEL ENH ANCEMENT MODE POWER MOSFET BVDSS RDS(O N) ID 30V 25mΩ 28A Description Advan ced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig n, low on-resistance and .
Manufacture

Advanced Power Electronics

Datasheet
Download 40T03GH Datasheet


Advanced Power Electronics 40T03GH

40T03GH; cost-effectiveness. The TO-252 package i s widely preferred for all commercial-i ndustrial surface mount applications an d suited for low voltage applications s uch as DC/DC converters. The through-ho le version (AP40T03GJ) are available fo r low-profile applications. GD S TO-25 2(H) G D S TO-251(J) Absolute Maxi mum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC.


Advanced Power Electronics 40T03GH

=25℃ TSTG TJ Parameter Drain-Source Vo ltage Gate-Source Voltage Continuous Dr ain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Curren t 1 Rating 30 +25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipatio n Linear Derating Factor Storage Temper ature Range Operating Junction Temperat ure Range Thermal Data Sy.


Advanced Power Electronics 40T03GH

mbol Rthj-c Rthj-a Rthj-a Parameter Maxi mum Thermal Resistance, Junction-case M aximum Thermal Resistance, Junction-amb ient (PCB mount) 3 Value 4 62.5 110 U nits ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change witho ut notice 1 200811034 Free Datasheet http://www.datasheet4u.com/ AP40T03GH/ J Electrical Characteris.

Part

40T03GH

Description

AP40T03GH



Feature


AP40T03GH/J RoHS-compliant Product Adva nced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHANNEL ENH ANCEMENT MODE POWER MOSFET BVDSS RDS(O N) ID 30V 25mΩ 28A Description Advan ced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig n, low on-resistance and .
Manufacture

Advanced Power Electronics

Datasheet
Download 40T03GH Datasheet




 40T03GH
Advanced Power
Electronics Corp.
AP40T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP40T03GJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
25mΩ
28A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+25
28
24
95
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4
62.5
110
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200811034
Free Datasheet http://www.datasheet4u.com/




 40T03GH
AP40T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=18A
VGS=4.5V, ID=14A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=18A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= +25V
ID=18A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=18A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=0.83Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 - - V
- 0.032 - V/
- - 25 m
- - 45 m
1 - 3V
- 20 -
S
- - 1 uA
- - 25 uA
- - +100 nA
- 8.8 - nC
- 2.5 - nC
- 5.8 - nC
- 6 - ns
- 62 - ns
- 16 - ns
- 4.4 - ns
- 655 - pF
- 145 - pF
- 95 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=28A, VGS=0V
Min. Typ. Max. Units
- - 28 A
- - 95 A
- - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Free Datasheet http://www.datasheet4u.com/




 40T03GH
90
T C =25 o C
60
10V
8 .0V
6 .0V
30
V G = 4. 0V
0
0.0 1.0 2.0 3.0
V DS , Drain-to-Source Voltage (V)
4.0
Fig 1. Typical Output Characteristics
70
I D =14A
T C =25
50
30
10
0
5 10
V GS , Gate-to-Source Voltage (V)
15
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
0.1
0
0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
75
T C =150 o C
50
AP40T03GH/J
10V
8 .0V
6 .0V
25
V G =4.0V
0
0.0 1.0 2.0 3.0 4.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =18A
V G =10V
1.4
0.8
0.2
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
150
2.0
1.5
1.0
0.5
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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