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CS2N60F

HUAJING
Part Number CS2N60F
Manufacturer HUAJING
Description Silicon N-Channel Power MOSFET
Published Jan 27, 2014
Detailed Description Huajing Discrete Devices Silicon General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained...
Datasheet PDF File CS2N60F PDF File

CS2N60F
CS2N60F

Overview
Huajing Discrete Devices Silicon General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
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R ○ N-Channel Power MOSFET CS2N60F A9H VDSS ID PD (TC=25℃ ) RDS(ON)Typ 600 2 24 3.
6 V A W Ω Features： l Fast Switching l Low ON Resistance(Rdson≤4.
5Ω) l Low Gate Charge (Typical Data:8.
5nC) l Low Reverse transfer capacitances(Typical:5.
4pF) l 100% Single Pul...


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