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Power MOSFET. CJP75N80 Datasheet

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Power MOSFET. CJP75N80 Datasheet






CJP75N80 MOSFET. Datasheet pdf. Equivalent




CJP75N80 MOSFET. Datasheet pdf. Equivalent





Part

CJP75N80

Description

N-Channel Power MOSFET



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP75N80 N-Channel Power MOSFET General Description The CJ75N80 uses a dvanced trench technology and design to Provide excellent RDS(on) with low gat e charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and gen eral purpose appli.
Manufacture

JIANGSU CHANGJIANG

Datasheet
Download CJP75N80 Datasheet


JIANGSU CHANGJIANG CJP75N80

CJP75N80; cations. FEATURE z Advanced trench proce ss technology z Special designed for co nvertors and power controls z High dens ity cell design for ultra low RDS(on) z Fully characterized avalanche voltage and current z Fast switching z Avalanch e energy 100% test APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Uninterru ptible power suppl.


JIANGSU CHANGJIANG CJP75N80

y Maximum ratings (Ta=25℃ unless other wise noted) Parameter Drain-Source volt age Gate-Source Voltage Drain Current(D C) at TC=25℃ Drain Current-Continuous @Current-Pulsed(note1) Power Dissipati on Maximum Power Dissipation (note 3, T a=25℃) (note 4, Tc=25℃) Symbol VDSS VGS ID(DC) IDM(pulse) PD EAS RθJA Tj Tstg Value 75 ±25 80 320 2 160 580 62. 5 175 -55 ~+175 Unit V A W W.


JIANGSU CHANGJIANG CJP75N80

mJ ℃/W ℃ TO-220 1. GATE 2. DRAIN 3. SOURCE 123 Single Pulsed Avalanche Energy(note2) Thermal Resistance, Junct ion-to-Ambient Storage Temperature Junc tion Temperature Notes 1. Repetitive R ating: Pulse width limited by maximum j unction temperature 2. EAS condition: T j=25℃ , VDD=37.5V,VG=10V,L=0.5mH,ID=2 0A 3. This test is performed with no he at sink at Ta=25℃ 4. Thi.

Part

CJP75N80

Description

N-Channel Power MOSFET



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP75N80 N-Channel Power MOSFET General Description The CJ75N80 uses a dvanced trench technology and design to Provide excellent RDS(on) with low gat e charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and gen eral purpose appli.
Manufacture

JIANGSU CHANGJIANG

Datasheet
Download CJP75N80 Datasheet




 CJP75N80
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate MOSFETS
CJP75N80 N-Channel Power MOSFET
General Description
The CJ75N80 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
FEATURE
z Advanced trench process technology
z Special designed for convertors and power controls
z High density cell design for ultra low RDS(on)
z Fully characterized avalanche voltage and current
z Fast switching
z Avalanche energy 100% test
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
TO-220
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source voltage
Symbol
VDSS
Gate-Source Voltage
VGS
Drain Current(DC) at TC=25
ID(DC)
Drain Current-Continuous @Current-Pulsed(note1)
IDM(pulse)
Power Dissipation
Maximum Power Dissipation
(note 3, Ta=25)
(note 4, Tc=25)
PD
Single Pulsed Avalanche Energy(note2)
EAS
Thermal Resistance, Junction-to-Ambient
RθJA
Storage Temperature
Tj
Junction Temperature
Tstg
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS condition: Tj=25, VDD=37.5V,VG=10V,L=0.5mH,ID=20A
3. This test is performed with no heat sink at Ta=25
4. This test is performed with infinite heat sink at Tc=25
Value
75
±25
80
320
2
160
580
62.5
175
-55 ~+175
123
Unit
V
A
W
W
mJ
/W
B,Dec,2011
Free Datasheet http://www.datasheet4u.com/




 CJP75N80
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Units
On/Off States
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current(TC=25)
Zero Gate Voltage Drain Current(TC=125)
Drain-Source On-State Resistance
BVDSS
VGS(th)
IGSS
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =0V, VGS =±20V
IDSS VDS =75V, VGS =0V
RDS(on) VGS =10V, ID =40A
75
2.0 2.85 4.0
V
±100 nA
1
µA
10
10 m
Dynamic characteristics
Forward Transconductance
Input Capacitance (note2)
Output Capacitance (note2)
Reverse Transfer Capacitance (note2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS =5V, ID =30A
VDS =25V,VGS =0V,f =1MHz
VDS =30V,VGS =10V,ID =30A
60
3100
310
260
100
18
27
S
pF
nC
Switching times (note2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD=30V,
RL=15, ID=2A,
VGS=10V,RG=2.5
18.2
15.6
nS
70.5
13.8
Source-Drain Diode characteristics
Source-Drain Current(Body Diode)
Pulsed Source-Drain Current(Body Diode)
Forward on Voltage
Reverse Recovery Time (note1)
Reverse Recovery Charge (note1)
Forward Turn-on Time
ISD
ISDM
80
A
320
VSD VGS =0V, ISD=40A, Tj=25
1.2 V
trr
Qrr
IF=75A, Tj=25,di/dt=100A/µs
53 nS
105 nC
t(on) Intrinsic turn-on time is negligible(turn-on dominated by LS+LD)
Notes:
1. Pulse Test : Pulse Width300µs, duty cycle 1.5%,RG=25,Starting Tj=25
2. These parameters have no way to verify.
B,Dec,2011
Free Datasheet http://www.datasheet4u.com/










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