PD1503YVS Transistor Datasheet

PD1503YVS Datasheet, PDF, Equivalent


Part Number

PD1503YVS

Description

Dual N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Niko-Sem

Total Page 7 Pages
Datasheet
Download PD1503YVS Datasheet


PD1503YVS
NIKO-SEM
Dual N-Channel Enhancement Mode Field
PD1503YVS
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
Q2 30V 15.8mΩ
Q1 30V 21mΩ
ID
9A
8A
1
2 Q1
3
Q2
4
8
7
6
5
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
L = 0.1mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Q2 Q1
30 30
±20 ±20
98
76
35 30
29 21
43 23
2
1.28
-55 to 150
UNITS
V
V
A
mJ
W
°C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Reverse Current
Forward Voltage
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
VR = 25V
IF = 1A
SYMBOL
IR
VF
TYPICAL
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Schottky
0.05
0.45
UNITS
mA
V
MAXIMUM
62.5
UNITS
°C / W
LIMITS
UNIT
MIN TYP MAX
Q2 30
Q1 30
Q2 1 1.7
Q1 1 2
3
3
V
REV 0.9
Oct-28-2009
1
Free Datasheet http://www.datasheet4u.com/

PD1503YVS
NIKO-SEM
Dual N-Channel Enhancement Mode Field
PD1503YVS
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State Resistance1
Forward Transconductance1
IGSS VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
IDSS
VDS = 20V, VGS = 0V, TJ = 125
°C
ID(ON)
RDS(ON)
gfs
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 7A
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 7A
VDS = 10V, ID = 9A
VGS = 10V, ID = 7A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
±100
nA
±100
1
-1
10 A
-10
35
A
30
14.2 20
10.5 15.8
mΩ
25.6 32
15.8 21
25
S
15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
DYNAMIC
Q2
Ciss
Q1
N-Channel
Q2
Coss VGS = 0V, VDS = 15V, f = 1MHz Q1
Q2
Crss
Q1
Q2
Rg VGS = 0V, VDS = 0V, f = 1MHz
Q1
Qg
(VGS=10V)
Q2
Q1
Qg
(VGS=4.5V)
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 9A
Q2
Q1
Q2
Q1
Q2
Qgd
Q1
1040
560
295
160
139
84
1.5
2
20
11
9
5.5
3.5
2.5
3.5
2.5
pF
Ω
nC
REV 0.9
Oct-28-2009
2
Free Datasheet http://www.datasheet4u.com/


Features NIKO-SEM Dual N-Channel Enhancement Mod e Field Effect Transistor PD1503YVS S OP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS Q2 Q1 30V 30V RDS(ON) 15.8mΩ 21mΩ ID 9A 8A 1 2 3 4 Q2 Q1 8 7 6 5 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TES T CONDITIONS Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Curren t Avalanche Energy Power Dissipation Ju nction & Storage Temperature Range L = 0.1mH TA = 25 °C TA = 70 °C TA = 25 C TA = 70 °C SYMBOL VDS VGS ID IDM IA S EAS PD Tj, Tstg Q2 30 ±20 9 7 35 29 43 2 1.28 -55 to 150 °C Q1 30 ±20 8 6 30 21 23 mJ W A UNITS V V ABSOLUTE MA XIMUM RATINGS (T A = 25 °C Unless Othe rwise Noted) PARAMETERS/TEST CONDITIONS Reverse Current Forward Voltage THERMA L RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 SYMBOL IR VF TY PICAL Schottky 0.05 0.45 MAXIMUM 62.5 UNITS mA V UNITS °C / W VR = 25V IF = 1A SYMBOL RJA Pulse width limite.
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