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2SC4466. C4466 Datasheet

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2SC4466. C4466 Datasheet






C4466 2SC4466. Datasheet pdf. Equivalent




C4466 2SC4466. Datasheet pdf. Equivalent





Part

C4466

Description

2SC4466



Feature


2SC4466 Silicon NPN Triple Diffused Plan ar Transistor (Complement to type 2SA16 93) sAbsolute maximum ratings (Ta=25°C ) Symbol VCBO VCEO VEBO IC IB PC Tj Tst g 2SC4466 120 80 6 6 3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpo se (Ta=25°C) 2SC4466 10max 10max 80min 50min∗ 1.5max 20typ 110typ V pF 20.0 min 4.0max sElectrical Cha.
Manufacture

Sanken electric

Datasheet
Download C4466 Datasheet


Sanken electric C4466

C4466; racteristics Symbol ICBO IEBO V(BR)CEO h FE VCE(sat) fT COB ∗hFE Rank Conditio ns VCB=120V VEB=6V IC=50mA VCE=4V, IC=2 A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VC B=10V, f=1MHz External Dimensions MT-1 00(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9 0.3 4.0 V a b ø3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 O(5 0 to100), P(70 to140), Y(90 to1.


Sanken electric C4466

80) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V ) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 V BB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ t f (µs) 0.34typ 5.45±0.1 Weight : Ap prox 6.0g a. Type No. b. Lot No. I C V CE Characteristics (Typical) 0m A 15 0m A 1 m 00 A A 80m V CE ( sat ) I B Characteristics (Typical) C.


Sanken electric C4466

ollector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperatu re Characteristics (Typical) 6 (V C E = 4V) 6 20 Collector Current I C (A) 5 0 mA Collector Current I C (A) 4 2 4 30mA mp) p) e Te Cas I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0 0 0 1 2 3 4 –30˚C 25˚C 125 I B =10mA ˚C ( (Cas (Case 2 20mA 1 2 e Tem 1 Base-Emittor Voltage V .

Part

C4466

Description

2SC4466



Feature


2SC4466 Silicon NPN Triple Diffused Plan ar Transistor (Complement to type 2SA16 93) sAbsolute maximum ratings (Ta=25°C ) Symbol VCBO VCEO VEBO IC IB PC Tj Tst g 2SC4466 120 80 6 6 3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpo se (Ta=25°C) 2SC4466 10max 10max 80min 50min∗ 1.5max 20typ 110typ V pF 20.0 min 4.0max sElectrical Cha.
Manufacture

Sanken electric

Datasheet
Download C4466 Datasheet




 C4466
2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4466
120
80
6
6
3
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC4466 Unit
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
VCB=120V
VEB=6V
IC=50mA
VCE=4V, IC=2A
IC=2A, IB=0.2A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
10max
10max
80min
50min
1.5max
20typ
110typ
µA
µA
V
V
MHz
pF
hFE Rank O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
30 10 3 10 –5 0.3
IB2 ton tstg tf
(A) (µs) (µs) (µs)
–0.3 0.16typ 2.60typ 0.34typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
6
200mA 150mA
100mA
80mA
50mA
4
30mA
2 20mA
IB=10mA
0
0 12 34
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
24
12
IC=6A
4A
2A
00
0 0.5 1.0 1.5 0
1
2
Base Current IB(A)
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
300
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
200
125˚C
(VCE=4V)
θ j-a– t Characteristics
5
100
50
30
0.02
100
Typ
50
0.1 0.5 1
Collector Current IC(A)
20
5 6 0.02
25˚C
–30˚C
0.1 0.5 1
Collector Current IC(A)
1
0.5
0.3
56 1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
Typ
20
10
0
–0.02
106
–0.1
–1
Emitter Current IE(A)
–6
Safe Operating Area (Single Pulse)
20
10
5
1
1m
0 01m0 sm s
s
DC
1
0.5
Without Heatsink
Natural Cooling
0.1
5
10 50
Collector-Emitter Voltage VCE(V)
100
Pc–Ta Derating
60
40
20
Without Heatsink
3.5
0
0 25 50
75 100 125
Ambient Temperature Ta(˚C)
150
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