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2SC6092LS. C6092LS Datasheet

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2SC6092LS. C6092LS Datasheet






C6092LS 2SC6092LS. Datasheet pdf. Equivalent




C6092LS 2SC6092LS. Datasheet pdf. Equivalent





Part

C6092LS

Description

2SC6092LS



Feature


Ordering number : ENA0834 2SC6092LS SA NYO Semiconductors DATA SHEET 2SC6092 LS Features • • • • NPN Triple Diffused Planar Silicon Transistor Co lor TV Horizontal Deflection Output App lications High speed. High breakdown v oltage (VCBO=1500V). Adoption of high r eliability HVP process. Adoption of MBI T process. Specifications Absolute Max imum Ratings at Ta=25°C Pa.
Manufacture

Sanyo

Datasheet
Download C6092LS Datasheet


Sanyo C6092LS

C6092LS; rameter Collector-to-Base Voltage Collec tor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Cur rent (Pulse) Collector Dissipation Junc tion Temperature Storage Temperature Sy mbol VCBO VCEO VEBO IC ICP PC Tj Tstg T c=25°C Conditions Ratings 1500 700 5 8 20 2.0 http://www.DataSheet4U.net/ Un it V V V A A W W °C °C 35 150 --55 t o +150 Electrical Ch.


Sanyo C6092LS

aracteristics at Ta=25°C Parameter Coll ector Cutoff Current Collector Cutoff C urrent Collector Sustain Voltage Emitte r Cutoff Current Symbol ICBO ICES VCEO( sus) IEBO Conditions VCB=800V, IE=0A VC E=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4 V, IC=0A 700 1 Ratings min typ max 10 1 0 Unit µA mA V mA Continued on next p age. Any and all SANYO Semiconductor C o.,Ltd. products descr.


Sanyo C6092LS

ibed or contained herein are, with regar d to "standard application", intended f or the use as general electronics equip ment (home appliances, AV equipment, co mmunication device, office equipment, i ndustrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aero.

Part

C6092LS

Description

2SC6092LS



Feature


Ordering number : ENA0834 2SC6092LS SA NYO Semiconductors DATA SHEET 2SC6092 LS Features • • • • NPN Triple Diffused Planar Silicon Transistor Co lor TV Horizontal Deflection Output App lications High speed. High breakdown v oltage (VCBO=1500V). Adoption of high r eliability HVP process. Adoption of MBI T process. Specifications Absolute Max imum Ratings at Ta=25°C Pa.
Manufacture

Sanyo

Datasheet
Download C6092LS Datasheet




 C6092LS
Ordering number : ENA0834
2SC6092LS
SANYO Semiconductors
DATA SHEET
2SC6092LS
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage (VCBO=1500V).
Adoption of high reliability HVP process.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
http://www.DataSheet4U.net/
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0A
VCE=1500V, RBE=0
IC=100mA, IB=0A
VEB=4V, IC=0A
Ratings
1500
700
5
8
20
2.0
35
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
min
700
Ratings
typ
max
Unit
10 µA
10 mA
V
1 mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2107KC TI IM TC-00000764 No. A0834-1/4
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 C6092LS
2SC6092LS
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
Symbol
Conditions
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE1
hFE2
tf
IC=2.25A, IB=0.45A
IC=4.5A, IB=0.9A
IC=4.5A, IB=0.9A
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=3A, IB1=0.6A, IB2=--1.2A
min
0.1
Ratings
typ
10
5.3
max
0.3
2
1.5
Unit
V
V
V
7.5
0.2 µs
Package Dimensions
unit : mm (typ)
7509-003
10.0
3.2
4.5
2.8
0.9
1.2 1.2
0.75 0.7
Switching Time Test Circuit
INPUT
PW=20µs
D.C.1%
VR
50
IB1
IB2
RB
+
100µF
OUTPUT
RL
66.7
+
470µF
VBE= --5V
VCC=200V
123
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
8
7 2.0A 1.8A
6
5
4
IC -- VCE
1.6A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
3 0.2A
2
0.05A
1
0 IB=0A
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT02643
hFE -- IC
7
5 Ta=120°C
VCE=5V
25°C
3
2 --40°C
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02645
http://www.DataSheet4U.net/
9
8
7
6
5
4
3
2
1
0
0
5
3
2
IC -- VBE
VCE=5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT02644
VCE(sat) -- IC
IC / IB=5
1.0
7
5
3
2
0.1
7
Ta= --40°C
5 120°C
3
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02646
No. A0834-2/4
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 C6092LS
2SC6092LS
SW Time -- IC
7
VCC=200V
5 tstg IC / IB1=5
IB2 / IB1=2
3 R load
2
SW Time -- IB2
10 VCC=200V
7 IC=3A
5 IB1=0.6A
3 tstg R load
2
1.0
7
5
3
2 tf
1.0
7
5 tf
3
2
0.1
0.1
2
5
3 ICP=20A
2
10 IC=8A
7
5
3
2
1.0
7
5
3
2
3 5 7 1.0
23
Collector Current, IC -- A
Forward Bias A S O
DC operation
5 7 10
IT02647
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
2.5
5 7 1000
IT12436
2.0
1.5
1.0
No heat sink
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12438
0.1
0.1
5
3
2
23
5 7 1.0
23
57
Base Current, IB2 -- A
IT02648
Reverse Bias A S O
10
7
5
3
2
http://www.DataSheet4U.net/
1.0
7
5 L=500µH
3 IB2= --1A
2 Tc=25°C
Single pulse
0.1
10
2 3 5 7 100
2 3 5 7 1000
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
40
23
IT12437
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT12439
No. A0834-3/4
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