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Photocoupler. TLP748J Datasheet

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Photocoupler. TLP748J Datasheet






TLP748J Photocoupler. Datasheet pdf. Equivalent




TLP748J Photocoupler. Datasheet pdf. Equivalent





Part

TLP748J

Description

Photocoupler



Feature


TOSHIBA Photocoupler IRED & Photo-Thyris tor TLP748J Office Machine Household Us e Equipment Solid State Relay Switching Power Supply TLP748J Unit: mm The TO SHIBA TLP748J consists of a photo−thy ristor optically coupled to an infrared emitting diode in a six lead plastic D IP package. • Peak OFF−state voltag e: 600 V (min) • Trigger LED current: 10 mA (max) • ON−state cu.
Manufacture

Toshiba

Datasheet
Download TLP748J Datasheet


Toshiba TLP748J

TLP748J; rrent: 150 mA (max) • Isolation voltag e: 4000 Vrms (min) • UL-recognized: U L 1577, File No.E67349 • cUL-recogniz ed: CSA Component Acceptance Service No .5A File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, please design ate the Option(D4). JEDEC ― JEITA ― TOSHIBA 11−7A8 Weight: 0.42 g (typ.) Pin Configuration (top .


Toshiba TLP748J

view) • Creepage distance: 7.62 mm p itch standard type 7.0 mm (min) Cleara nce: 7.0 mm (min) Insulation thicknes s: 0.4 mm (min) 10.16 mm pitch TLPxxxx F type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 1 6 2 5 3 4 1 : ANODE 2 : CATHODE 3 : N.C. 4 : CATHODE 5 : ANODE 6 : GATE © 2019 1 Toshiba Electron ic Devices & Storage Corporation Start of commercial produc.


Toshiba TLP748J

tion 2008-12 2019-06-10 Absolute Maximu m Ratings (Ta = 25°C) TLP748J Charac teristic Symbol Rating Unit Detecto r LE D Forward current Forward curren t derating (Ta ≥ 53 °C) Peak forward current (100 μs pulse, 100 pps) Rever se voltage Diode power dissipation Diod e power dissipation derating (Ta ≥ 53 °C) Peak forward voltage (RGK = 27 kΩ ) Peak reverse voltage (RGK.

Part

TLP748J

Description

Photocoupler



Feature


TOSHIBA Photocoupler IRED & Photo-Thyris tor TLP748J Office Machine Household Us e Equipment Solid State Relay Switching Power Supply TLP748J Unit: mm The TO SHIBA TLP748J consists of a photo−thy ristor optically coupled to an infrared emitting diode in a six lead plastic D IP package. • Peak OFF−state voltag e: 600 V (min) • Trigger LED current: 10 mA (max) • ON−state cu.
Manufacture

Toshiba

Datasheet
Download TLP748J Datasheet




 TLP748J
TOSHIBA Photocoupler IRED & Photo-Thyristor
TLP748J
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
TLP748J
Unit: mm
The TOSHIBA TLP748J consists of a photothyristor optically
coupled to an infrared emitting diode in a six lead plastic DIP
package.
Peak OFFstate voltage: 600 V (min)
Trigger LED current: 10 mA (max)
ONstate current: 150 mA (max)
Isolation voltage: 4000 Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
VDE-approved: EN 60747-5-5 (Note 1)
Note 1 : When a VDE approved type is needed,
please designate the Option(D4).
JEDEC
JEITA
TOSHIBA
117A8
Weight: 0.42 g (typ.)
Pin Configuration (top view)
Creepage distance:
7.62 mm pitch
standard type
7.0 mm (min)
Clearance:
7.0 mm (min)
Insulation thickness: 0.4 mm (min)
10.16 mm pitch
TLPxxxxF type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
1
6
2
5
3
4
1 : ANODE
2 : CATHODE
3 : N.C.
4 : CATHODE
5 : ANODE
6 : GATE
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2008-12
2019-06-10




 TLP748J
Absolute Maximum Ratings (Ta = 25°C)
TLP748J
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 53 °C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta 53°C)
Peak forward voltage (RGK = 27 kΩ)
Peak reverse voltage (RGK = 27 kΩ)
ONstate current
ONstate current derating (Ta 25°C)
Peak ONstate current (100 μs pulse, 120 pps)
Peak one cycle surge current
Peak reverse gate voltage
Output power dissipation
Output power dissipation derating (Ta 25°C)
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 60 s, R.H.60 %) (Note 1)
IF
ΔIF / °C
IFP
VR
PD
PD /°C
VDRM
VRRM
IT(RMS)
ΔIT / °C
ITP
ITSM
VGM
PO
ΔPO / °C
Tstg
Topr
Tsol
BVS
50
0.7
1
5
100
-1.4
600
600
150
2.0
3
2
5
150
1.5
55 to 125
40 to 100
260
4000
mA
mA / °C
A
V
mW
mW/°C
V
V
mA
mA / °C
A
A
V
mW
mW / °C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
Operating temperature
Gate to cathode resistance
Gate to cathode capacity
VAC
IF
Topr
RGK
CGK
240 Vac
15
25
mA
25
85
°C
10
27
kΩ
0.01 0.1
μF
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-10




 TLP748J
Individual Electrical Characteristics (Ta = 25°C)
TLP748J
Characteristic
Forward voltage
Reverse current
Capacitance
OFFstate current
Reverse current
ONstate voltage
Holding current
OFFstate dv / dt
Capacitance
Symbol
VF
IR
CT
IDRM
IRRM
VTM
IH
dv / dt
Cj
Test Condition
Min
IF = 10 mA
1.0
VR = 5 V
VF = 0 V, f = 1 MHz
VAK = 600 V, RGK = 27 kΩ
VKA = 600 V, RGK = 27 kΩ
ITM = 100 mA
RGK = 27 kΩ
VAK = 420 V, RGK = 27 kΩ
5
V = 0 V,
f = 1 MHz
Anode to gate
Gate to cathode
Typ.
1.15
30
5
500
Max Unit
1.3
V
10
μA
pF
5
μA
5
μA
1.45 V
1
mA
V/μs
pF
Coupled Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Turnon time
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
IFT
tON
CS
RS
BVS
Test Condition
VAK = 6 V, RGK = 27 kΩ
IF = 30 mA, VAA = 50 V
RGK = 27 kΩ
VS = 0 V, f = 1 MHz
VS = 500 V, R.H.60 %
AC, 60 s
Min Typ. Max Unit
10
mA
15
μs
0.8
pF
1×1012 1014
Ω
4000
Vrms
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-10






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