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Power MOSFET. LD7912 Datasheet

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Power MOSFET. LD7912 Datasheet






LD7912 MOSFET. Datasheet pdf. Equivalent




LD7912 MOSFET. Datasheet pdf. Equivalent





Part

LD7912

Description

N-Channel Power MOSFET



Feature


Features  BVDSS = 500V, ID = 1.2A  RDS(ON,MAX) = 5.6Ω@Vgs=10V  Low i ntrinsic capacitance  RoHS and green compliant packages  SOT-89 package Applications  Low power SMPS power s upply  Standby power Equivalent Bloc k Diagram Preliminary – LD7912 500V N-Channel Power MOSFET General Descript ion The LD7912 is an N-channel power MO SFET for high input voltage. It prov.
Manufacture

Lighting Device

Datasheet
Download LD7912 Datasheet


Lighting Device LD7912

LD7912; ides very low input capacitance of gate charging. The typical application of LD 7912 is used to be a low cost SMPS, sta ndby power or charger. Ordering Inform ation Part No. LD7912 Package SOT-89- 3 Packing Options Bag(BG) Tape & Ree l (TR) LD7912L5-BG LD7912L5-TR  P ackage material default is “Green” package. Package Pin Out Product Mark ing LD8888 SSSSS ●  L.


Lighting Device LD7912

ine 1 – “LD” is a fixed character 8888: product name  Line 2 – SSSSS : lot number Thermal Characteristics Symbol Parameter RθJC Thermal Resist ance, Junction-Case Max RθJA Thermal Resistance, Junction-Ambient Notes: Su rface mounted on FR4 board t ≤ 10sec Value Unit 3.125 °C /W 60 °C /W Lig hting Device Technologies Corporation T el: +886-3-567-8806 Fax: +886-3-56.


Lighting Device LD7912

7-8706 DCC-LD7912-R1.0-20120102 1 www .ldtech.com.tw copyright©2012 Absolut e Maximum Ratings Symbol Parameter V DS VGS ID IDM EAS IAR dv/dt Drain-Sour ce Voltage Gate-Source Voltage Drain Cu rrent-Continuous Drain Current-Pulsed * 1 Single Pulse D-S Avalanche Energy *2 Avalanche Current *1 Peak Diode Recover y *3 PD Maximum Power Dissipation @ TJ = 25˚C TJ, TSTG Op.

Part

LD7912

Description

N-Channel Power MOSFET



Feature


Features  BVDSS = 500V, ID = 1.2A  RDS(ON,MAX) = 5.6Ω@Vgs=10V  Low i ntrinsic capacitance  RoHS and green compliant packages  SOT-89 package Applications  Low power SMPS power s upply  Standby power Equivalent Bloc k Diagram Preliminary – LD7912 500V N-Channel Power MOSFET General Descript ion The LD7912 is an N-channel power MO SFET for high input voltage. It prov.
Manufacture

Lighting Device

Datasheet
Download LD7912 Datasheet




 LD7912
Features
BVDSS = 500V, ID = 1.2A
RDS(ON,MAX) = 5.6@Vgs=10V
Low intrinsic capacitance
RoHS and green compliant packages
SOT-89 package
Applications
Low power SMPS power supply
Standby power
Equivalent Block Diagram
Preliminary – LD7912
500V N-Channel Power MOSFET
General Description
The LD7912 is an N-channel power MOSFET for high
input voltage. It provides very low input capacitance of
gate charging.
The typical application of LD7912 is used to be a low
cost SMPS, standby power or charger.
Ordering Information
Part No.
LD7912
Package
SOT-89-3
Packing Options
Bag(BG)
Tape & Reel (TR)
LD7912L5-BG
LD7912L5-TR
Package material default is “Green” package.
Package Pin Out
Product Marking
LD8888
SSSSS…
Line 1 – “LD” is a fixed character
8888: product name
Line 2 – SSSSS…: lot number
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-Case Max
RθJA Thermal Resistance, Junction-Ambient
Notes: Surface mounted on FR4 board t 10sec
Value Unit
3.125 °C /W
60 °C /W
Lighting Device Technologies Corporation Tel: +886-3-567-8806 Fax: +886-3-567-8706
DCC-LD7912-R1.0-20120102
1
www.ldtech.com.tw
copyright©2012




 LD7912
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID
IDM
EAS
IAR
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed *1
Single Pulse D-S Avalanche Energy *2
Avalanche Current *1
Peak Diode Recovery *3
PD Maximum Power Dissipation @ TJ = 25˚C
TJ, TSTG Operating and Store Temperature Range
Preliminary – LD7912
Limit
500
±30
1
4
40
1
3.5
40
-55 to 150
Unit
V
V
A
A
mJ
A
V/ns
W
°C
The values beyond the boundaries
of absolute maximum rating may
cause the damage to the device.
Functional operation in this context
is not implied. Continuous use of
the device at the absolute rating
level might influence device
reliability. All voltages have their
reference to device ground.
Electrical Characteristics
TA = 25°C unless specified, otherwise minimum and maximum values are guaranteed by production testing requirements.
Parameter
Symbol Test Condition
Min. Typ. Max. Unit
Static Characteristics
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Reverse Gate Body Leakage
Forward Gate Body Leakage
Forward Transconductance
Dynamic Characteristics
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSSR
IGSSF
gfs
VGS = 0V, ID = 250µA
VGS = 10V, ID = 0.6A
VDS = VGS, ID = 250µA
VDS = 10V, VGS = 0V
VDS = 400V, VGS = 0V
VDS = 500V, VGS = 0V
VGS = -30V, VDS = 0V
VGS = 30V, VDS = 0V
VDS = 50V, ID = 0.5A
500 – – V
– 5.2 5.6
2.0 3.1 4.0 V
– – 1.0
– – 1.0 µA
– – 1.0
– – -100 nA
– – 100 nA
– 0.75 -- S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDD = 400V, ID = 1A,
VGS = 10V *4*5
VDS = 25V, VGS = 0V,
f = 1.0MHz
– 7 12
– 2.5 – nC
– 3.5 –
– 190 –
– 38 – pF
–4–
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VGS = 10V, ID = 0.5A,
VDS = 200V, RG = 4.7*4*5
Turn-Off Fall Time
tf
Drain-Source Diode Characteristics and Maximum Ratings
– 22 –
24
20
nS
– 26 –
Drain-Source Diode Forward
IS
Maximum Pulsed Current
ISM
Drain-Source Diode Forward Voltage VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
Notes:
1. Repetitive Rating: Pulse width limited by
maximum junction temperature
2. L=75mH, VDD=50V, RG=25, Starting
TJ=25ºC
VGS = 0V
VGS = 0V
VGS = 0V, IS = 0.6A
VGS = 0V, IS = 1A
dIF/dt = 100A/µS *4
––1A
– – 4.0 A
– – 1.5 V
– 330 – nS
– 780 – µC
– 4.7 – A
3. ISD 0.5A, di/dt 300A/µS, VDD BVDSS, Starting
TJ=25ºC
4. Pulse test: pulse width 300µS.
5. Essentially independent of operating temperature
Lighting Device Technologies Corporation Tel: +886-3-567-8806 Fax: +886-3-567-8706
DCC-LD7912-R1.0-20120102
2
www.ldtech.com.tw
copyright©2012




 LD7912
Package Outline
Preliminary – LD7912
LD Tech Corporation
Tel: +886-3-567-8806
Fax: +886-3-567-8706
E-mail: sales@ldtech.com.tw
Website: www.ldtech.com.tw
Lighting Device Technologies Corporation Tel: +886-3-567-8806 Fax: +886-3-567-8706
DCC-LD7912-R1.0-20120102
3
www.ldtech.com.tw
copyright©2012






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