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POWER MOSFET. AP86T02GH Datasheet

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POWER MOSFET. AP86T02GH Datasheet






AP86T02GH MOSFET. Datasheet pdf. Equivalent




AP86T02GH MOSFET. Datasheet pdf. Equivalent





Part

AP86T02GH

Description

(AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP86T02GH/J RoHS-compliant Product Adva nced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistanc e ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MO SFET BVDSS RDS(ON) ID 25V 6mΩ 75A D escription G The TO-252 package is wid ely preferred for commercial-industrial surface mount applications and suited for low voltage applicati.
Manufacture

Advanced Power Electronics

Datasheet
Download AP86T02GH Datasheet


Advanced Power Electronics AP86T02GH

AP86T02GH; ons such as DC/DC converters. The throug h-hole version (AP86T02GJ) is available for low-profile applications. G D S TO-252(H) D S TO-251(J) Absolute Ma ximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Sou rce Voltage Continuous Drain Current, V GS @ 10V3 Continuous Drain Current, VGS @ 10V Pulsed Drain Curr.


Advanced Power Electronics AP86T02GH

ent 1 Rating 25 +20 75 62 300 75 0.5 -5 5 to 175 -55 to 175 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Tempera ture Range Operating Junction Temperatu re Range Thermal Data Symbol Rthj-c Rt hj-a Parameter Maximum Thermal Resistan ce, Junction-case Maximum Thermal Resis tance, Junction-ambient Value 2 110 Uni ts ℃/W ℃/W Data & speci.


Advanced Power Electronics AP86T02GH

fications subject to change without noti ce 1 200808159 Free Datasheet http://w ww.datasheet4u.com/ AP86T02GH/J Electr ical Characteristics@Tj=25oC(unless oth erwise specified) Symbol BVDSS ΔBVDSS/ ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=2 50uA Min. 25 1 - Typ. 0.02 42 23 5 14 11 105 32 8 490 360 1.1 Max. Units 6 10 3 1 250 +100 37 V.

Part

AP86T02GH

Description

(AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP86T02GH/J RoHS-compliant Product Adva nced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistanc e ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MO SFET BVDSS RDS(ON) ID 25V 6mΩ 75A D escription G The TO-252 package is wid ely preferred for commercial-industrial surface mount applications and suited for low voltage applicati.
Manufacture

Advanced Power Electronics

Datasheet
Download AP86T02GH Datasheet




 AP86T02GH
Advanced Power
Electronics Corp.
AP86T02GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
G
D
S
BVDSS
RDS(ON)
ID
25V
6mΩ
75A
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T02GJ) is
available for low-profile applications.
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
G
D
S
Rating
25
+20
75
62
300
75
0.5
-55 to 175
-55 to 175
TO-251(J)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2
110
Units
/W
/W
1
200808159
Free Datasheet http://www.datasheet4u.com/




 AP86T02GH
AP86T02GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS=+20V
ID=30A
VDS=20V
VGS=4.5V
VDS=10V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.3Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
25 -
-V
- 0.02 - V/
- - 6 m
- - 10 m
1 - 3V
- 42 -
S
- - 1 uA
- - 250 uA
- - +100 nA
- 23 37 nC
-5
nC
- 14
nC
- 11 - ns
- 105 -
ns
- 32 - ns
- 8 - ns
- 1830 2930 pF
- 490 - pF
- 360 - pF
- 1.1 1.6
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 28 - ns
- 15 - nC
Drain-Source Avalanche Ratings
Symbol
EAS
Parameter
Drain-Source Avalanche Energy4
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Single Pulse Test.
Test Conditions
ID=24A, VDD=20V, L=100uH
Min. Typ. Max. Units
- - 29 mJ
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Free Datasheet http://www.datasheet4u.com/




 AP86T02GH
200
10V
T C =25 o C
7.0V
5.0V
150 4.5V
100
50 V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
I D =30A
T c =25
12
8
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20 T j =175 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP86T02GH/J
120
10V
T C = 175 o C
7.0V
5.0V
90 4.5V
60
V G = 3 .0V
30
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 2. Typical Output Characteristics
1.8
I D =45A
V G =10V
1.4
1.0
0.6
25 50 75 100 125 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
175
0.8
0.4
0.0
25 50 75 100 125 150 175
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
Free Datasheet http://www.datasheet4u.com/






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