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POWER MOSFET. AP86T03GH Datasheet

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POWER MOSFET. AP86T03GH Datasheet






AP86T03GH MOSFET. Datasheet pdf. Equivalent




AP86T03GH MOSFET. Datasheet pdf. Equivalent





Part

AP86T03GH

Description

(AP86T03GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Datasheet
Download AP86T03GH Datasheet


Advanced Power Electronics AP86T03GH

AP86T03GH; AP86T03GH/J RoHS-compliant Product Adva nced Power Electronics Corp. ▼ Low On -resistance ▼ Simple Drive Requiremen t ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 6.5mΩ 75A S Description Advanced Power MOSFETs fr om APEC provide the designer with the b est combination of fast switching, rugg edized device design, low.


Advanced Power Electronics AP86T03GH

on-resistance and cost-effectiveness. T he TO-252 package is widely preferred f or commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP86T03GJ) a re available for low-profile applicatio ns. G □ D S TO-252(H) G D S TO -251(J) Absolute Maximum Ratings Symbo l VDS VGS ID@TC=25℃ .


Advanced Power Electronics AP86T03GH

ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Par ameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Conti nuous Drain Current Pulsed Drain Curren t 1 Rating 30 +20 75 55 300 75 -55 to 175 -55 to 175 Units V V A A A W ℃ Total Power Dissipation Storage Tem perature Range Operating Junction Tempe rature Range Thermal Data Symbol Rthj- c Rthj-a Rthj-a Parameter .



Part

AP86T03GH

Description

(AP86T03GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Datasheet
Download AP86T03GH Datasheet




 AP86T03GH
Advanced Power
Electronics Corp.
AP86T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T03GJ)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
G
D
S
GD
S
Rating
30
+20
75
55
300
75
-55 to 175
-55 to 175
30V
6.5mΩ
75A
TO-252(H)
TO-251(J)
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.0
62.5
110
Units
/W
/W
/W
Data & specifications subject to change without notice
1
200902262
Free Datasheet http://www.datasheet4u.com/





 AP86T03GH
AP86T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=45A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 - - V
- - 6.5 m
- - 11 m
1 - 3V
- 58 -
S
- - 10 uA
- - +100 nA
- 25 40 nC
- 5.6
nC
- 17
nC
- 10.5 -
ns
- 78 - ns
- 27 - ns
- 16 - ns
- 2170 3500 pF
- 485 - pF
- 310 - pF
- 1.1 1.6
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 35 - ns
- 36 - nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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 AP86T03GH
250
T C =25 o C
200
150
100
50
10V
7.0 V
6.0V
5.0 V
V G = 4.0 V
0
0.0 1.0 2.0 3.0 4.0 5.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
I D =30A
T C =25 o C
10
8
6
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =175 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP86T03GH/J
120
T C =175 o C
10V
7 .0V
100
6.0V
5.0 V
80
60
V G =4.0V
40
20
0
0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
1.2
0.8
0.4
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
3
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