(PDF) L-32P3C Datasheet PDF | Kingbright





L-32P3C Datasheet PDF

Part Number L-32P3C
Description PhotoTransistor
Manufacture Kingbright
Total Page 2 Pages
PDF Download Download L-32P3C Datasheet PDF

Features: Datasheet pdf PHOTOTRANSISTOR L-32P3C Features !MECHA NICALLY Description AND SPECTRALLY MAT CHED TO P3 Made with NPN silicon photot ransistor chips. THE L-34 SERIES INFRA RED EMITTING LED LAMP. !WATER CLEAR LE NS. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless o therwise noted. 3. Lead spacing is meas ured where the lead emerge package. 4. Specifications are subject to change wi thout notice. SPEC NO: DSAA4192 APPROV ED : J. Lu REV NO: V.4 CHECKED : Allen Liu DATE:MAR/06/2003 DRAWN:D.L.HUANG PAGE: 1 OF 2 Free Datasheet http://www .datasheet.in/ Electrical / Optical Ch aracteristics at T)=25°C Sy m b o l Pa r am et er Min . Ty p . Max . Un it Tes t Co n d ic t io n I C=100uA, Ee=0mW/c m2 I E=100uA, Ee=0mW/cm2 I C=2mA, Ee=20 mW/cm2 VCE=10V, Ee=0mW/cm2 V CE=5V, I C =1mA, R L=1000Ω VCE=5V, Ee=1mW/cm2, =940nm V BR C EO V BR EC O V CE (SAT) I C EO TR TF Collector-to-Emitter Bre akdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-E.

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L-32P3C datasheet
PHOTOTRANSISTOR
L-32P3C
Features
!MECHANICALLY AND SPECTRALLY MATCHED TO
THE L-34 SERIES INFRARED EMITTING LED LAMP.
!WATER CLEAR LENS.
Description
P3 Made with NPN silicon phototransistor chips.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: DSAA4192
APPROVED : J. Lu
REV NO: V.4
CHECKED : Allen Liu
DATE:MAR/06/2003
DRAWN:D.L.HUANG
PAGE: 1 OF 2
Free Datasheet http://www.datasheet.in/

L-32P3C datasheet
Electrical / Optical Characteristics at T)=25°C
Symbol
Parameter
Min.
V BR CEO Collector-to-Emitter Breakdown Voltage
V BR ECO Emitter-to-Collector Breakdown Voltage
V CE (SAT) Collector-to-Emitter Saturation Voltage
I CEO
Collector Dark Current
T R Rise Time (10% to 90%)
T F Fall Time (90% to 10%)
30
5
-
-
-
-
I (ON) On State Collector Current
0.1
Typ.
-
-
-
-
3
3
0.5
Max.
-
-
0.8
100
-
-
-
Unit Test Condiction
V
I C=100uA,
Ee=0mW/cm2
V
I E=100uA,
Ee=0mW/cm2
V
I C=2mA,
Ee=20mW/cm2
nA
VCE=10V,
Ee=0mW/cm2
us V CE=5V,
I C=1mA,
R L=1000
us
VCE=5V,
mA
Ee=1mW/cm2,
λ=940nm
Absolute Maximum Ratings at T)=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Lead soldering Temperature
(>5mm for 5sec)
Maximum Rating
30V
5V
100mW
-40°C ~ +85°C
-40°C ~ +85°C
260°C
SPEC NO: DSAA4192
APPROVED : J. Lu
REV NO: V.4
CHECKED : Allen Liu
DATE:MAR/06/2003
DRAWN:D.L.HUANG
PAGE: 2 OF 2
Free Datasheet http://www.datasheet.in/




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