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ENHANCEMENT MODE. UT6402 Datasheet

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ENHANCEMENT MODE. UT6402 Datasheet






UT6402 MODE. Datasheet pdf. Equivalent




UT6402 MODE. Datasheet pdf. Equivalent





Part

UT6402

Description

N-CHANNEL ENHANCEMENT MODE

Manufacture

UTC

Datasheet
Download UT6402 Datasheet


UTC UT6402

UT6402; UNISONIC TECHNOLOGIES CO., LTD UT6402 N- CHANNEL ENHANCEMENT MODE „ DESCRIPTION Power MOSFET 3 2 1 SOT-23 The UT6 402 is N-Channel enhancement mode Power MOSFET, designed with high density cel l, with fast switching speed, low on-re sistance, excellent thermal and electri cal capabilities, operation with low ga te voltages. This device is suitable fo r use as a load swi.


UTC UT6402

tch or in PWM applications. 6 5 4 1 2 3 „ SYMBOL Drain SOT-26 Gate Source „ ORDERING INFORMATION Orderi ng Number Lead Free Plating Halogen-Fre e UT6402L-AE3-R UT6402G-AE3-R UT6402L-A G6-R UT6402G-AG6-R Package SOT-23 SOT-2 6 1 S D Pin Assignment 2 3 4 5 G D D G S D 6 D Packing Tape Reel Tape Reel „ MARKING www.unisonic.com.tw Copyrigh t © 2010 Unisonic Tec.


UTC UT6402

hnologies Co., Ltd 1 of 6 QW-R502-152.C Free Datasheet http://www.datasheet4u .net/ UT6402 „ ABSOLUTE MAXIMUM RATIN GS (TA = 25℃, unless otherwise specif ied) Power MOSFET PARAMETER SYMBOL RA TINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Cont inuous Drain Current (Note 3) ID 6.9 A Pulsed Drain Current (Note 2) IDM 20 A Power Dissipation PD 2.



Part

UT6402

Description

N-CHANNEL ENHANCEMENT MODE

Manufacture

UTC

Datasheet
Download UT6402 Datasheet




 UT6402
UNISONIC TECHNOLOGIES CO., LTD
UT6402
N-CHANNEL
ENHANCEMENT MODE
Power MOSFET
3
„ DESCRIPTION
The UT6402 is N-Channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching
speed, low on-resistance, excellent thermal and electrical
capabilities, operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
„ SYMBOL
Drain
1
2
SOT-23
4
5
6
1 23
SOT-26
Gate
Source
„ ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen-Free
UT6402L-AE3-R
UT6402G-AE3-R
UT6402L-AG6-R
UT6402G-AG6-R
Package
1
Pin Assignment
2345
6
Packing
SOT-23 S G D - - - Tape Reel
SOT-26 D D G S D D Tape Reel
„ MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-152.C
Free Datasheet http://www.datasheet4u.net/





 UT6402
UT6402
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TA = 25, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Note 3)
ID 6.9
Pulsed Drain Current (Note 2)
IDM 20
Power Dissipation
PD 2
Junction Temperature
TJ +150
Strong Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
V
V
A
A
W
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
MIN
TYP
74
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
MAX
110
UNIT
/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0 V, ID =250µA
VDS =30V, VGS =0 V
VDS =0 V, VGS = ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
(Note 2)
VGS(TH)
ID(ON)
RDS(ON)
VDS =VGS, ID =250 µA
VDS =5V, VGS =4.5V
VGS =10V, ID =6.9A
VGS =4.5V, ID =5.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =15 V, VGS =0V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge (Note 2)
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=10V,VDS=15V,RL=2.2,
RG =3
VDS =15V, VGS =10V, ID =6.9A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=1A
Maximum Body-Diode Continuous
Current
IS
Reverse Recovery Time
tRR IF=6.9 A, dI/dt=100A/μs
Reverse Recovery Charge
QRR IF=6.9 A, dI/dt=100A/μs
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width 300us, duty cycle 0.5%.
3. Surface mounted on 1 in2 copper pad of FR4 board.
MIN TYP MAX UNIT
30 V
1 µA
±100 nA
1 1.9
20
22.5
34.5
3
28
42
V
A
m
m
680 820
102
77 108
pF
4.6
4.1
20.6
5.2
11.5 13.88
1.82
3.2
16.7
ns
nC
0.76 1
3
16.5 20
7.8
V
A
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-152.C
Free Datasheet http://www.datasheet4u.net/





 UT6402
UT6402
„ TYPICAL CHARACTERISTICS
On-Region Characteristics
30 10V
6V
25 5V
4.5V
4V
20
15
3.5V
10
5 VGS=3V
0
0 12 3 4 5
Drain to Source Voltage,VDS (V)
Power MOSFET
Transfer Characteristics
20
VDS=5V
16
12
8
125
4
25
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate to Source Voltage,VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-152.C
Free Datasheet http://www.datasheet4u.net/



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