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HGT1S7N60A4DS

Intersil Corporation
Part Number HGT1S7N60A4DS
Manufacturer Intersil Corporation
Description 600V/ SMPS Series N-Channel IGBT
Published Mar 23, 2005
Detailed Description TM HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 File Number 4827.1 600V, SMPS Series N-Channel IGBT w...
Datasheet PDF File HGT1S7N60A4DS PDF File

HGT1S7N60A4DS
HGT1S7N60A4DS

Overview
TM HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 File Number 4827.
1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49331.
The diode used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching applications operating at...


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