HGTG30N60B3D, HGT4E30N60B3DS
Data Sheet December 2001
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction...
