HGTG32N60E2
April 1995
32A, 600V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
32A, 600V Latch Free Operation Typical Fall Time - 600ns High Input Impedance Low Conduction Loss
COLLECTOR (BOTTOM SIDE METAL)
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bi...
