barrier diode. YG865C04R Datasheet

YG865C04R Datasheet PDF, Equivalent


Part Number

YG865C04R

Description

Low IR Schottky barrier diode

Manufacture

Fuji

Total Page 3 Pages
PDF Download
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YG865C04R Datasheet
YG865C04R (45V / 20A)
Low IR Schottky barrier diode
[200509]
Outline drawings, mm
Features
Low IR
Low VF
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
1 23
Maximum ratings and characteristics
Maximum ratings
Item
Symbol
Conditions
Rating
Unit
Repetitive peak surge reverse voltage VRSM
tw=500ns, duty=1/40
45
V
Repetitive peak reverse voltage
VRRM
45 V
Isolating voltage
Average output current
Non-repetitive surge current
Viso
Io
IFSM
Terminals-to-Case, AC.1min.
Square wave, duty=1/2
Tc=115°C
Sine wave 10ms
1500
20 *
145
V
A
A
non-repetitive reverse surge power dissipation PRM
tw=10µs, Tj=25°C
330
W
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
Electrical characteristics (at Ta=25°C Unless otherwise specified )
Item
Forward voltage **
Reverse current **
Thermal resistance
Symbol
VF
IR
Rth(j-c)
Conditions
IF=10A
VR=40V
Junction to case
Max.
0.63
175
2.5
Unit
V
µA
°C/W
**Rating per element
Mechanical characteristics
Mounting torque
Approximate mass
http://www.fujielectric.co.jp/fdt/scd/
Recommended torque
0.3 to 0.5
2
N·m
g

YG865C04R Datasheet
(45V / 20A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150oC
Tj=125oC
Tj=100oC
Tj=25oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
YG865C04R (20A)
Reverse Characteristic (typ.)
Tj=150oC
101 Tj=125oC
Tj=100oC
100
10-1
Tj= 25oC
10-2
10-3
10-4
0
10 20 30 40
VR Reverse Voltage (V)
50
60
Forward Power Dissipation (max.)
16
14 11112222I3333o4444555566667777888899990000111122223333444455556666
λ
12
360 º
10 Square wave λ=60o
Square wave λ=120o
Sine wave λ=180o
8 Square wave λ=180o
DC
6
4
2
Per 1element
0
0 2 4 6 8 10 12
Io Average Forward Current (A)
Reverse Power Dissipation (max.)
4
360 º
3 VR 1111111222222233333334444444 11111112222222333333344444445555555
DC
α
2
α=180o
1
0
0 20 40 60
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
120
110
100 360 º
λ
90
80
1111222233334444555566667777I8888o9999000011112222333344445555
VR=20V
DC
SSqinuearweawveavλe=λ1=8108o 0o
Square wave λ=120o
Square wave λ=60o
70
0
5 10 15 20 25 30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10 100 1000
VR Reverse Voltage (V)


Features Datasheet pdf YG865C04R (45V / 20A) Low IR Schottky ba rrier diode [200509] Outline drawings, mm Features Low IR Low VF Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220F Epoxy resin UL : V-0 Connection diagram 1 23 Maximum ratin gs and characteristics Maximum ratings Item Symbol Conditions Rating Unit Repetitive peak surge reverse voltage VRSM tw=500ns, duty=1/40 45 V Repe titive peak reverse voltage VRRM 45 V Isolating voltage Average output curr ent Non-repetitive surge current Viso Io IFSM Terminals-to-Case, AC.1min. Sq uare wave, duty=1/2 Tc=115°C Sine wave 10ms 1500 20 * 145 V A A non-repeti tive reverse surge power dissipation PR M tw=10µs, Tj=25°C 330 W Operatin g junction temperature Tj +150 °C Storage temperature Tstg -40 to +150 °C * Out put current of center tap f ull wave connection Electrical charact eristics (at Ta=25°C Unless otherwise specified ) Item Forward voltage ** Reverse current ** Thermal resis.
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