K15A60U Datasheet: TK15A60U





K15A60U TK15A60U Datasheet

Part Number K15A60U
Description TK15A60U
Manufacture Toshiba
Total Page 6 Pages
PDF Download Download K15A60U Datasheet PDF

Features: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applicati ons • • • • Low drain-source ON -resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Y fs⎪ = 8.5 S (typ.) Low leakage curren t: IDSS = 100 μA (max) (VDS = 600 V) E nhancement mode: Vth = 3.0 to 5.0 V (VD S = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Character istics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1 ) (Note 1) Symbol VDSS VGSS ID IDP PD E AS IAR EAR Tch Tstg Rating 600 ±30 15 30 40 81 15 4 150 -55 to 150 Unit V V A W mJ A mJ °C °C Drain power dissipa tion (Tc = 25°C) Single pulse avalanch e energy (Note 2) Avalanche current Rep etitive avalanche energy (Note 3) Chann el temperature Storage temperature rang e 1: Gate 2: Drain 3: Source JEDEC JE ITA TOSHIBA ⎯ SC-67 2-10U1B Note: Weight: 1.7 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the .

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TK15A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK15A60U
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.)
High forward transfer admittance: Yfs= 8.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS ±30 V
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
ID
IDP
PD
EAS
15
A
30
40 W
81 mJ
1: Gate
2: Drain
3: Source
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
15
4
150
-55 to 150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of
Weight: 1.7 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2008-02
1 2013-11-01
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