Power MOSFET. YMP230N55 Datasheet

YMP230N55 Datasheet PDF, Equivalent


Part Number

YMP230N55

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

YM

Total Page 6 Pages
PDF Download
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YMP230N55 Datasheet
YMP230N55
N-Channel
Enhancement Mode Power MOSFET
General Description
The YMP230N55 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
55
2
3
230
V
m
m
A
Features
VDS=55VID=230A@ VGS =10V
RDS(ON)< 3 m@ VGS =10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
YMP230N55
YMP230N55
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=28V,VG=10V,L= 1mH ,R g=25;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
TJ,TSTG
Value
55
±25
230
170
900
300
1.33
2000
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
1/6
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YMP230N55 Datasheet
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseNote2)
Symbol
RthJC
YMP230N55
Value
0.75
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
55
V
Zero Gate Voltage Drain Current(Tc=25)
IDSS
VDS=-24V,VGS=0V
1 μA
Gate-Body Leakage Current
IDSS VGS=±25V,VDS=0V
±100 μA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=10V,ID=250μA
2-
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=95A
2 3 mΩ
Dynamic Characteristics
Forward Transconductance
gFS
VDS=25V,ID=60A
106
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=30V,VGS=0V,
F=1.0MHz
7360
1680
240
PF
PF
PF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=48V,ID=95A,
Qgs VGS=10V
Qgd
160 nC
35 nC
42 nC
Switching times
Turn-on Delay Time
td(on)
17 33 nS
Turn-on Rise Time
tr VDD=30V,ID=1A,RL=30Ω
21 37 nS
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
VGS=10V,RG= 3 Ω
RD =0.21Ω
72 148
nS
26 78 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Forward on voltage(Note 3)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge
ISD
VSD Tj=25,ISD=20A,VGS=0V
trr Tj=25,IF=40A,di/dt=100A/μs
Qrr
0.8
74
140
95
1.3
A
V
nS
nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 3.Pulse Test: Pulse Width 300μs, Duty Cycle 2%, R G =25 Ω, Starting Tj=25
2/6
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Features Datasheet pdf YMP230N55 N-Channel Enhancement Mode Pow er MOSFET Product Summary BVDSS RDS(ON) typ. typ. max. ID 55 2 3 230 V mΩ m A General Description The YMP230N55 uses advanced trench technology and de sign to provide excellent RDS(ON) with low gate charge. This device is suitabl e for use in PWM, load switching and ge neral purpose applications. Features VDS=55V;ID=230A@ V GS =10V; RDS( ON)< 3 mΩ @ VGS =10V ● Special proc ess technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell d esign for ultra low Rdson ● Fully cha racterized Avalanche voltage and curren t ● Good stability and uniformity wit h high EAS ● Excellent package for go od heat dissipation 100% UIS TESTED! A pplication ● ● ● Power switching application Hard Switched and High Freq uency Circuits Uninterruptible Power Su pply TO-220-3L top view Schematic dia gram Package Marking And Ordering Info rmation Device Marking YMP230N55 Device YMP230N55 Device Package TO-220-3L Reel Size Tape wid.
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