STY60NK30Z. Y60NK30Z Datasheet

Y60NK30Z Datasheet PDF, Equivalent


Part Number

Y60NK30Z

Description

STY60NK30Z

Manufacture

STMicroelectronics

Total Page 8 Pages
PDF Download
Download Y60NK30Z Datasheet PDF


Y60NK30Z Datasheet
STY60NK30Z
N-CHANNEL 300V - 0.033- 60A Max247
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS
RDS(on)
ID
Pw
STY60NK30Z 300 V < 0.045 60 A 450 W
s TYPICAL RDS(on) = 0.033
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH EFFICIENCY
SWITCHING DC/DC CONVETERS FOR
PLASMA TV’s
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE
MARKING
STY60NK30Z
Y60NK30Z
PACKAGE
Max247
PACKAGING
TUBE
February 2004
1/8
Free Datasheet http://www.Datasheet4U.com

Y60NK30Z Datasheet
STY60NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 60A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Value
300
300
± 30
60
37.5
240
450
3.57
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
0.28
30
300
Max Value
60
0.7
°C/W
°C/W
°C
Unit
A
J
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
Free Datasheet http://www.Datasheet4U.com


Features Datasheet pdf STY60NK30Z N-CHANNEL 300V - 0.033Ω - 6 0A Max247 Zener-Protected SuperMESH™P ower MOSFET TYPE STY60NK30Z s s s s s s VDSS 300 V RDS(on) < 0.045 Ω ID 6 0 A Pw 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100 % AVALANCHE TESTED GATE CHARGE MINIMIZE D VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY Max247 2 1 3 DESCRIPTION The SuperMESH™ series is obtained through an extreme o ptimization of ST’s well established stripbased PowerMESH™ layout. In addi tion to pushing on-resistance significa ntly down, special care is taken to ens ure a very good dv/dt capability for th e most demanding applications. Such ser ies complements ST full range of high v oltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH EFFICIENCY SWITCHING DC/DC CONVETE RS FOR PLASMA TV’s s IDEAL FOR OFF-LI NE POWER SUPPLIES, ADAPTORS AND PFC OR DERING INFORMATION SALES TYPE STY60NK30Z MARKING Y60NK30Z PACKAGE Max247 PACKAGIN.
Keywords Y60NK30Z, datasheet, pdf, STMicroelectronics, STY60NK30Z, 60NK30Z, 0NK30Z, NK30Z, Y60NK30, Y60NK3, Y60NK, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)