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IRG7PH28UD1MPBF

INSULATED GATE BIPOLAR TRANSISTOR

Description

IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  Ultra-low VF diode  1300Vpk repetitive transient capacity  100% of the par...

International Rectifier

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IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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