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IRG7PH35UD1MPBF
INSULATED GATE BIPOLAR TRANSISTOR
Description
IRG7PH35UD1MPbF INSULATED GATE BIPOLAR
TRANSISTOR
WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILMĀ Positive VCE (ON) Temperature Co-Efficient ...
International Rectifier
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IRG7PH35UD1MPBF
INSULATED GATE BIPOLAR TRANSISTOR
- International Rectifier
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