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IRG7RC10FDPBF
INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR
TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE(on) Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode Square RBSOA G E C VCES = 600V IC = 9.0A, TC = 100°C tsc > 3μs, Tjmax = 150°C VCE(on) typ. = 1.6V @ IC = 5A n-channel Benefits ...
International Rectifier
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IRG7RC10FDPBF
INSULATED GATE BIPOLAR TRANSISTOR
- International Rectifier
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