IRGP4262DPbF IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A Applications Industrial Motor Drive UPS G Gate
G E C
G
G
n-channel
G IRGP4262DPbF TO-247AC C Collector
C
E
C
E
G IRGP4262D-EPbF TO-247AD E Emitter
Features
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