IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
G E
E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF
C
C
C
C
E G
C
E
VCE(on) typ. = 1.7V @ 6A
n-channel
G
TO-220AB IRGB4610DPbF
C
E
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