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SW4N60B

SEMIPOWER
Part Number SW4N60B
Manufacturer SEMIPOWER
Description N-channel I-PAK/D-PAK/TO-220F MOSFET
Published Apr 22, 2014
Detailed Description SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness...
Datasheet PDF File SW4N60B PDF File

SW4N60B
SW4N60B

Overview
SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.
5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 4A RDS(ON) : 2.
5Ω 2 1 3 2 3 1 2 2 3 1 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
Order Codes Item 1 2 3 Sales Type SW I 4N60 SW D 4N60 SW F 4N60 Marking SW4N60B SW4N60B SW4N60B Package TO-251 TO-252 TO-220F Packaging TUBE REEL TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Continuous Drain Current Drain curren...


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