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D1223

Toshiba Semiconductor
Part Number D1223
Manufacturer Toshiba Semiconductor
Description 2SD1223
Published Apr 22, 2014
Detailed Description 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer ...
Datasheet PDF File D1223 PDF File

D1223
D1223

Overview
2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • • • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) Complementary to 2SB908.
Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 80 5 4 0.
4 1.
0 15 150 −55 to 150 Unit V V V A A JEDE...


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