N-Channel MOSFET. FCH041N60F Datasheet

FCH041N60F MOSFET. Datasheet pdf. Equivalent

Part FCH041N60F
Description N-Channel MOSFET
Feature FCH041N60F — N-Channel SuperFET® II FRFET® MOSFET FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 6.
Manufacture Fairchild Semiconductor
Datasheet
Download FCH041N60F Datasheet

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Recommendation Recommendation Datasheet FCH041N60F Datasheet





FCH041N60F
FCH041N60F
N-Channel SuperFET® II FRFET® MOSFET
600 V, 76 A, 41 m
December 2014
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 36 mΩ
• Ultra Low Gate Charge (Typ. Qg = 277 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(f > 1 Hz)
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH041N60F
600
±20
±30
76
48.1
228
2025
15
5.95
100
50
595
4.76
-55 to +150
300
FCH041N60F
0.21
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FCH041N60F Rev. C5
1
www.fairchildsemi.com



FCH041N60F
Package Marking and Ordering Information
Part Number
FCH041N60F
Top Mark
FCH041N60F
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 10 mA, VGS = 0 V, TJ = 25oC
ID = 10 mA, VGS = 0 V, TJ = 150oC
ID = 10 mA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 38 A
VDS = 20 V, ID = 38 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 38 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
600
650
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
-
0.67
-
267
-
-
-
-
10
-
±100
V
V/oC
μA
nA
- 5V
36 41 mΩ
64.5 -
S
10800
324
4.5
185
748
277
65.3
116
1.0
14365
430
-
-
-
360
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 38 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 38 A, di/dt 200 A/μs, VDD 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
63 136 ns
66 142 ns
244 498 ns
53 116 ns
- 77 A
- 231 A
- 1.2 V
214 - ns
1.79 - μC
©2013 Fairchild Semiconductor Corporation
FCH041N60F Rev. C5
2
www.fairchildsemi.com





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