PROCESS
CPD87R
Schottky Diode
Low Leakage Schottky Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 14.6 x 14.6 MILS 3.9 MILS 11.8 x 11.8 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 80,698 PRINCIPAL DEVICE TYPES CFSH2-4L
R1 (22-March 2010...