PROCESS
CPD93V
Switching Diode
High Current Switching Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 12.8 x 12.8 MILS 7.1 MILS 5.1 x 5.1 MILS Al - 30,000Å Au-As - 10,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 63,904 PRINCIPAL DEVICE TYPES CMPD4150 BAS56
R2 (22-...
