Controlled Rectifiers. MCR100-8 Datasheet

MCR100-8 Rectifiers. Datasheet pdf. Equivalent

Part MCR100-8
Description Sensitive Gate Silicon Controlled Rectifiers
Feature MCR100 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices .
Manufacture ON Semiconductor
Datasheet
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MCR100-8
MCR100 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
Blocking Voltage to 600 V
OnState Current Rating of 0.8 A RMS at 80°C
High Surge Current Capability 10 A
Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
Immunity to dV/dt 20 V/msec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
PbFree Packages are Available*
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SCRs
0.8 A RMS
100 thru 600 V
G
AK
TO92
CASE 29
STYLE 10
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MCR
100x
AYWWG
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 Rev. 10
1
x = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Cathode
2 Gate
3 Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Publication Order Number:
MCR100/D
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MCR100-8
MCR100 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Notes 1 and 2)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW)
MCR1003
MCR1004
MCR1006
MCR1008
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current, (TC = 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)
Circuit Fusing Consideration, (t = 8.3 ms)
IT(RMS)
ITSM
I2t
0.8
10
0.415
A
A
A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms)
PGM
0.1
W
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)
PG(AV)
0.01
W
Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms)
IGM 1.0
A
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms)
VGRM
5.0
V
Operating Junction Temperature Range @ Rate VRRM and VDRM
TJ 40 to 110 °C
Storage Temperature Range
Tstg 40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,JunctiontoCase
JunctiontoAmbient
RqJC 75 °C/W
RqJA
200
Lead Solder Temperature
(t1/16from case, 10 secs max)
TL 260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VD = Rated VDRM and VRRM; RGK = 1 kW)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
Peak Forward OnState Voltage*
(ITM = 1.0 A Peak @ TA = 25°C)
Gate Trigger Current (Note 4)
(VAK = 7.0 Vdc, RL = 100 W)
TC = 25°C
Holding Current (Note 3)
TC = 25°C
(VAK = 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW) TC = 40°C
Latch Current (Note 4)
(VAK = 7.0 V, Ig = 200 mA)
TC = 25°C
TC = 40°C
Gate Trigger Voltage (Note 4)
(VAK = 7.0 Vdc, RL = 100 W)
TC = 25°C
TC = 40°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1 kW,TJ = 110°C)
Critical Rate of Rise of OnState Current
(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%.
3. RGK = 1000 W included in measurement.
4. Does not include RGK in measurement.
IDRM, IRRM
VTM
IGT
IH
IL
VGT
dV/dt
di/dt
mA
− − 10
− − 100
− − 1.7 V
40 200 mA
0.5 5.0 mA
− − 10
0.6 10 mA
− − 15
0.62 0.8
− − 1.2
V
20 35
V/ms
− − 50 A/ms
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