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GKI04076

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N Channel Trench Power MOSFET


Description
40 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI04076 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)  Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A)  Low Total Gate Charge  High Speed...



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GKI04076

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