TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
TO-263 AA (IXTA) TO-220AB (IXTP)
IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T
VDSS ID25
RDS(on)
= = ≤
- 150V - 44A 65mΩ
TO-3P (IXTQ)
G S D (Tab) G DS D (Tab)
G D S Tab
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings - 150 - 150 ±15 ±25 - 44 -130 - 22 1 298 -55 ... +150 150 -55 ... +150 V V V V A A A J W °C °C °C °C °C Nm/lb.in. g g
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
z z
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220, TO-247 & TO-3P) TO-263 TO-220 TO-3P TO-247
300 260 1.13/10 2.5 3.0 5.5 6.0
International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages
z z z
g .