Planar Transistors. HBNPZ1NS6R Datasheet

HBNPZ1NS6R Transistors. Datasheet pdf. Equivalent

HBNPZ1NS6R Datasheet
Recommendation HBNPZ1NS6R Datasheet
Part HBNPZ1NS6R
Description General Purpose NPN PNP Epitaxial Planar Transistors
Feature HBNPZ1NS6R; CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2009.06.05 Revised Date : 2011.02.22 Pa.
Manufacture CYStech Electronics
Datasheet
Download HBNPZ1NS6R Datasheet




CYStech Electronics HBNPZ1NS6R
CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2009.06.05
Revised Date : 2011.02.22
Page No. : 1/6
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNPZ1NS6R
Features
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Pb-free package.
Equivalent Circuit
HBNPZ1NS6R
Outline
SOT-363R
EIAJ:SC-88/SC-70-6 JEDEC: SOT-363
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
50 -50
45 -45
6 -5
150 -150
200(total) *1
150
-55~+150
Note: *1 150mW per element must not be exceeded.
Unit
V
V
V
mA
mW
°C
°C
HBNPZ1NS6R
CYStek Product Specification
http://www.Datasheet4U.com



CYStech Electronics HBNPZ1NS6R
CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2009.06.05
Revised Date : 2011.02.22
Page No. : 2/6
Characteristics (Ta=25°C)
TR1 (NPN)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
50
45
6
-
-
-
200
80
-
TR2 (PNP)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
-50
-45
-5
-
-
-
200
60
-
Typ.
-
-
-
-
-
0.2
-
180
2
Typ.
-
-
-
-
-
-0.25
-
140
4
Max.
-
-
-
15
100
0.4
600
-
3.5
Max.
-
-
-
-15
-100
-0.5
600
-
5
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=30V
VEB=5V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-30V
VEB=-4V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBNPZ1NS6R
CYStek Product Specification



CYStech Electronics HBNPZ1NS6R
CYStech Electronics Corp.
Characteristic curves
TR1 (NPN)
Spec. No. : C901S6R
Issued Date : 2009.06.05
Revised Date : 2011.02.22
Page No. : 3/6
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
HFE@VCE=6V
1000
VCE(SAT)@IC=10IB
100
100
0.1
1 10 100
Collector Current--- IC(mA)
1000
Saturation Voltage vs Collector Current
1000
VBE(SAT)@IC=10IB
10
0.1
1 10 100
Collector Current--- IC(mA)
1000
Cutoff Frequency vs Collector Current
1
FT@VCE=12V
100
0.1
1 10 100
Collector Current ---IC (mA)
1000
0.1
1
10
Collector Current---IC (mA)
100
HBNPZ1NS6R
CYStek Product Specification







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