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P-Channel MOSFET. IXTH52P10P Datasheet

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P-Channel MOSFET. IXTH52P10P Datasheet






IXTH52P10P MOSFET. Datasheet pdf. Equivalent




IXTH52P10P MOSFET. Datasheet pdf. Equivalent





Part

IXTH52P10P

Description

P-Channel MOSFET

Manufacture

IXYS Corporation

Datasheet
Download IXTH52P10P Datasheet


IXYS Corporation IXTH52P10P

IXTH52P10P; PolarPTM Power MOSFETs P-Channel Enhance ment Mode Avalanche Rated IXTA52P10P I XTP52P10P IXTQ52P10P IXTH52P10P TO-263 AA (IXTA) TO-220AB (IXTP) D G S D ( Tab) GD S D (Tab) G S Symbol VDSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Co nditions TJ = 25°C to 150°C TJ = 25° C to 150°C, RGS = 1MΩ Continuous Tran sient Maximum Ratings .


IXYS Corporation IXTH52P10P

-100 V -100 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 52 A -130 A - 52 A 1.5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 300 -55 ... +150 150 -55 ... +150 V/ns W °C °C °C 1.6mm (0.062 in.) f rom Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Torque (TO -3P,TO-220,TO-247) 1.13/10 Nm/lb.in..


IXYS Corporation IXTH52P10P

TO-263 TO-220 TO-3P TO-247 2.5 g 3. 0 g 5.5 g 6.0 g Symbol Test Cond itions (TJ = 25°C, Unless Otherwise S pecified) BVDSS VGS = 0V, ID = - 250 A VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 V .



Part

IXTH52P10P

Description

P-Channel MOSFET

Manufacture

IXYS Corporation

Datasheet
Download IXTH52P10P Datasheet




 IXTH52P10P
PolarPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA52P10P
IXTP52P10P
IXTQ52P10P
IXTH52P10P
TO-263 AA (IXTA)
TO-220AB (IXTP)
D
G
S
D (Tab)
GD S
D (Tab)
G
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
-100
V
-100
V
±20
V
±30
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
- 52
A
-130
A
- 52
A
1.5
J
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
10
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300
°C
260
°C
Mounting Torque (TO-3P,TO-220,TO-247) 1.13/10
Nm/lb.in.
TO-263
TO-220
TO-3P
TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
-10 μA
-150 μA
50 mΩ
VDSS =
ID25 =
RDS(on)
- 100V
- 52A
50mΩ
TO-3P (IXTQ)
G
D
S
Tab
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Fast Intrinsic Diode
z Dynamic dv/dt Rated
z Avalanche Rated
z Rugged PolarPTM Process
z Low QG and Rds(on)
z Low Drain-to-Tab Capacitance
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push-Pull Amplifiers
z DC Choppers
z Current Regulators
z Automatic Test Equipment
© 2013 IXYS CORPORATION, All Rights Reserved
DS99912C(01/13)





 IXTH52P10P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-3P)(TO-247)
(TO-220)
IXTA52P10P IXTQ52P10P
IXTP52P10P IXTH52P10P
Characteristic Values
Min. Typ. Max.
12
20
S
2845
pF
1015
pF
275
pF
22
ns
29
ns
38
ns
22
ns
60
nC
17
nC
23
nC
0.21
0.50
0.42 °C/W
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = - 26A, VGS = 0V, Note 1
trr
QRM
IRM
IF = - 26A, -di/dt = -100A/μs
VR = - 50V, VGS = 0V
Characteristic Values
Min. Typ. Max.
- 52 A
- 200 A
- 3.5 V
120
ns
0.53
μC
- 8.9
A
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





 IXTH52P10P
TO-247 Outline
1 = Gate
2 = Drain
3 = Source
TO-220 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA52P10P IXTQ52P10P
IXTP52P10P IXTH52P10P
TO-3P Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
TO-263 Outline



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