PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
TO-263 (IXTA)
IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P
TO-247 (IXTH)
RDS(on)
VDSS ID25
= = ≤
- 100V - 52A 50mΩ
TO-220 (IXTP)
G
S D (TAB)
G
D
D (TAB) S
G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings -100 -100 ±20 ±30 - 52 -130 - 52 1.5 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g
D S
D (TAB)
TO-3P (IXTQ)
G
D
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features:
z z z z z z z z
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-247)
300 260 1.13/10 6.0 5.5 3.0 2.5
International standard packages Fast intrinsic diode Dynamic dV/d.