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P-Channel MOSFET. IXTQ52P10P Datasheet

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P-Channel MOSFET. IXTQ52P10P Datasheet






IXTQ52P10P MOSFET. Datasheet pdf. Equivalent




IXTQ52P10P MOSFET. Datasheet pdf. Equivalent





Part

IXTQ52P10P

Description

P-Channel MOSFET

Manufacture

IXYS Corporation

Datasheet
Download IXTQ52P10P Datasheet


IXYS Corporation IXTQ52P10P

IXTQ52P10P; PolarPTM Power MOSFET P-Channel Enhancem ent Mode Avalanche Rated TO-263 (IXTA) IXTA52P10P IXTH52P10P IXTP52P10P IXTQ5 2P10P TO-247 (IXTH) RDS(on) VDSS ID25 = = ≤ - 100V - 52A 50mΩ TO-220 ( IXTP) G S D (TAB) G D D (TAB) S G Symbol VDSS VDGR VGSS VGSM ID25 IDM I AR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150.


IXYS Corporation IXTQ52P10P

°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ ID M, VDD ≤ VDSS, TJ ≤ 150°C TC = 25 C Maximum Ratings -100 -100 ±20 ±30 - 52 -130 - 52 1.5 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g D S D (TAB) TO-3P (IXTQ) G D S D (TAB) G = Gate S = Source D = Drain T.


IXYS Corporation IXTQ52P10P

AB = Drain Features: z z z z z z z z 1 .6mm (0.062 in.) from case for 10s Plas tic body for 10s Mounting torque TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-2 47) 300 260 1.13/10 6.0 5.5 3.0 2.5 I nternational standard packages Fast int rinsic diode Dynamic dV/dt Rated Avalan che Rated Rugged PolarPTM process Low Q G and Rds(on) characterization Low Drai n-to-Tab capacitan.



Part

IXTQ52P10P

Description

P-Channel MOSFET

Manufacture

IXYS Corporation

Datasheet
Download IXTQ52P10P Datasheet




 IXTQ52P10P
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
TO-247 (IXTH)
VDSS =
ID25 =
RDS(on)
- 100V
- 52A
50mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
GS
D (TAB)
Test Conditions
G
DS
D (TAB)
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
-100
-100
±20
±30
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
- 52
-130
- 52
1.5
A
A
A
J
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
10
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300 °C
260 °C
Mounting torque (TO-3P,TO-220,TO-247) 1.13/10
Nm/lb.in.
TO-247
TO-3P
TO-220
TO-263
6.0 g
5.5 g
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±100 nA
-10 μA
-150 μA
50 mΩ
G DS
TO-3P (IXTQ)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features:
z International standard packages
z Fast intrinsic diode
z Dynamic dV/dt Rated
z Avalanche Rated
z Rugged PolarPTM process
z Low QG and Rds(on) characterization
z Low Drain-to-Tab capacitance
z Low package inductance
- easy to drive and to protect
Applications:
z Hight side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z Improved Gate, Avalanche and
dynamic dV/dt ruggedness
z High power density
z Fast switching
z Easy to parallel
© 2008 IXYS CORPORATION, All rights reserved
DS99912A(5/08)
http://www.Datasheet4U.com





 IXTQ52P10P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, V DS = 0.5 • VDSS, ID = 0.5 • I D25
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-3P)(TO-247)
(TO-220)
Characteristic Values
Min. Typ. Max.
12 20
S
2845
1015
275
pF
pF
pF
22 ns
29 ns
38 ns
22 ns
60 nC
17 nC
23 nC
0.21
0.50
0.42 °C/W
°C/W
°C/W
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS VGS = 0V
ISM Repetitive, pulse width limited by TJM
VSD IF = - 26A, VGS = 0V, Note 1
trr
QRM
IRM
IF = - 26A, -di/dt = -100A/ μs
VR = - 50V, VGS = 0V
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
Characteristic Values
Min. Typ. Max.
- 52 A
- 200 A
- 3.5 V
120
0.53
- 8.9
ns
μC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





 IXTQ52P10P
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
TO-247 (IXTH) Outline
123
P
e
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-3P (IXTQ) Outline
Pins: 1 - Gate
2 - Drain
© 2008 IXYS CORPORATION, All rights reserved



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