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Part Number IXTQ52P10P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description P-Channel MOSFET
Datasheet IXTQ52P10P DatasheetIXTQ52P10P Datasheet (PDF)

  IXTQ52P10P   IXTQ52P10P
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-247 (IXTH) RDS(on) VDSS ID25 = = ≤ - 100V - 52A 50mΩ TO-220 (IXTP) G S D (TAB) G D D (TAB) S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings -100 -100 ±20 ±30 - 52 -130 - 52 1.5 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g D S D (TAB) TO-3P (IXTQ) G D S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features: z z z z z z z z 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-247) 300 260 1.13/10 6.0 5.5 3.0 2.5 International standard packages Fast intrinsic diode Dynamic dV/d.



IXTP52P10P IXTQ52P10P IXYB82N120C3H1


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