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N-channel MOSFET. 160N75F3 Datasheet

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N-channel MOSFET. 160N75F3 Datasheet






160N75F3 MOSFET. Datasheet pdf. Equivalent




160N75F3 MOSFET. Datasheet pdf. Equivalent





Part

160N75F3

Description

N-channel MOSFET

Manufacture

STMicroelectronics

Datasheet
Download 160N75F3 Datasheet


STMicroelectronics 160N75F3

160N75F3; STB160N75F3 STP160N75F3 - STW160N75F3 N- channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh™ low voltage P ower MOSFET TARGET SPECIFICATION Gener al features Type STB160N75F3 STP160N75F 3 STW160N75F3 VDSS 75V 75V 75V RDS(on) 4.2mΩ 4.5mΩ 4.5mΩ ID 120A (1) 3 120A (1) 120A (1) 1 2 TO-220 TO-247 1. Current limited by package ■ ■ Ultra low on-resistance 100% A.


STMicroelectronics 160N75F3

valanche tested 3 1 D²PAK Descriptio n This N-channel enhancement mode Power MOSFET is the latest refinement of STM icroelectronics unique “Single Featur e Size™“strip-based process with le ss critical alignment steps and therefo re a remarkable manufacturing reproduci bility. The resulting transistor shows extremely high packing density for low on-resistance, rugged ava.


STMicroelectronics 160N75F3

lanche characteristics and low gate char ge. Internal schematic diagram Applic ations ■ Switching application Orde r codes Part number STB160N75F3 STP160N 75F3 STW160N75F3 Marking 160N75F3 160N7 5F3 160N75F3 Package D²PAK TO-220 TO-2 47 Packaging Tape & reel Tube Tube Feb ruary 2007 Rev 1 1/13 www.st.com 13 This is preliminary information on a ne w product foreseen to.



Part

160N75F3

Description

N-channel MOSFET

Manufacture

STMicroelectronics

Datasheet
Download 160N75F3 Datasheet




 160N75F3
STB160N75F3
STP160N75F3 - STW160N75F3
N-channel 75V - 3.5m- 120A - TO-220 - TO-247 - D2PAK
MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB160N75F3
VDSS
75V
STP160N75F3
75V
STW160N75F3
75V
1. Current limited by package
Ultra low on-resistance
100% Avalanche tested
RDS(on)
4.2m
4.5m
4.5m
ID
120A (1)
120A (1)
120A (1)
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “Single Feature
Size™“strip-based process with less critical
alignment steps and therefore a remarkable
manufacturing reproducibility. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and low gate charge.
Applications
Switching application
3
2
1
TO-220
TO-247
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB160N75F3
STP160N75F3
STW160N75F3
Marking
160N75F3
160N75F3
160N75F3
Package
D²PAK
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
February 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/13
www.st.com
13
http://www.Datasheet4U.com





 160N75F3
Contents
Contents
STB160N75F3 - STP160N75F3 - STW160N75F3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13





 160N75F3
STB160N75F3 - STP160N75F3 - STW160N75F3
1 Electrical
ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID (1)
ID (1)
IDM(2)
PTOT (3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
dv/dt Peak diode recovery voltage slope
EAS Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. Rated according to Rthj-case
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Ther mal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
75
± 20
120
96
480
315
2.1
Tbd
Tbd
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.48
62.5
300
Unit
°C/W
°C/W
°C
3/13



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