DatasheetsPDF.com

Recovery Rectifier. MUR3060 Datasheet

DatasheetsPDF.com

Recovery Rectifier. MUR3060 Datasheet






MUR3060 Rectifier. Datasheet pdf. Equivalent




MUR3060 Rectifier. Datasheet pdf. Equivalent





Part

MUR3060

Description

Ultrafast Recovery Rectifier



Feature


Ultrafast Rectifier INCHANGE Semiconduc tor MUR3060 FEATURES ·Guarding for ov er voltage protection ·Metal of silico n rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% tested ·Minimum Lot-to-Lot vari ations for robust device performance an d reliable operation APPLICATIONS ·Sw itching power supply ·Rectifier in swi tch mode supplies ABSOLU.
Manufacture

INCHANGE

Datasheet
Download MUR3060 Datasheet


INCHANGE MUR3060

MUR3060; TE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VRRM VRWM VR IF(AV) Peak Repe titive Reverse Voltage Working Peak Rev erse Voltage DC Blocking Voltage Averag e Rectified Forward Current Nonrepetit ive Peak Surge Current IFSM (Surge ap plied at rated load conditions half- w ave, single phase, 60Hz) PD Maximum p ower dissipation VALUE UNIT 600 V 3 0 A 150 A 100 W.


INCHANGE MUR3060

TJ Junction Temperature -40~175 ℃ Tstg Storage Temperature Range -40~1 75 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHAR ACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case IN CHANGE Semiconductor MUR3060 MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS( Ta=25℃) (Pulse Test: Pulse.


INCHANGE MUR3060

Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX VF* Maximu m Instantaneous Forward Voltage IF= 15 A ;Tj=25℃ IF= 15A ;Tj=150℃ IR* Ma ximum Instantaneous Reverse Current VR = VRWM;Tj=25℃ VR= VRWM;Tj=150℃ 1.5 1.2 10 1000 trr Maximum Reverse Reco very Time IF =1A; 60 *:Pulse Test:Pu lse width=300us,duty cycle≤2.0% UNIT V μA ns NOTICE: ISC reserves .

Part

MUR3060

Description

Ultrafast Recovery Rectifier



Feature


Ultrafast Rectifier INCHANGE Semiconduc tor MUR3060 FEATURES ·Guarding for ov er voltage protection ·Metal of silico n rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% tested ·Minimum Lot-to-Lot vari ations for robust device performance an d reliable operation APPLICATIONS ·Sw itching power supply ·Rectifier in swi tch mode supplies ABSOLU.
Manufacture

INCHANGE

Datasheet
Download MUR3060 Datasheet




 MUR3060
Ultrafast Rectifier
INCHANGE Semiconductor
MUR3060
FEATURES
·Guarding for over voltage protection
·Metal of silicon rectifier,majority carrier conduction
·Low forward voltage,high efficiency
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Rectifier in switch mode supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
PD
Maximum power dissipation
VALUE UNIT
600
V
30
A
150
A
100
W
TJ
Junction Temperature
-40~175
Tstg
Storage Temperature Range
-40~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 MUR3060
Fast Recovery Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
MUR3060
MAX
1.5
UNIT
/W
ELECTRICAL CHARACTERISTICS(Ta=25) (Pulse Test: Pulse Width=300μs,Duty Cycle2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF*
Maximum Instantaneous Forward Voltage
IF= 15A ;Tj=25
IF= 15A ;Tj=150
IR*
Maximum Instantaneous Reverse Current
VR= VRWM;Tj=25
VR= VRWM;Tj=150
1.5
1.2
10
1000
trr
Maximum Reverse Recovery Time
IF =1A;
60
*:Pulse Test:Pulse width=300us,duty cycle≤2.0%
UNIT
V
μA
ns
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







Recommended third-party MUR3060 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)