FDA16N50_F109 â N-Channel UniFETTM MOSFET
November 2013
FDA16N50_F109
N-Channel UniFETTM MOSFET
500V, 16.5 A, 380 mī Features
RDS(on) = 380 mī (Max.) @ VGS = 10, ID = 8.3 A Low Gate Charge (Typ. 32 nC) Low C rss (Typ. 20 pF) 100% Avalanche Tested
Description
UniFETTM MOSFET is F airchild Semiconductor âs high volt age MOSFET family based on planar...