PowerTrench MOSFET. FDP3651U Datasheet

FDP3651U Datasheet PDF, Equivalent


Part Number

FDP3651U

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDP3651U Datasheet PDF


FDP3651U Datasheet
October 2013
FDP3651U
N-Channel PowerTrench® MOSFET
100 V, 80 A, 18 mΩ
Features
Applications
RDS(on) = 15 m( Typ.) @ VGS = 10 V, ID = 80 A
High Performance Trench Technology for Extremely
Low RDS(on)
• Low Miller Charge
• UIS Capability (Single Pulse and Repetitive Pulse)
Consumer Appliances
Synchronous Rectification
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplie s
Micro Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1)
PD
EAS
TJ, TSTG
TL
Power Dissipation
Single Pulsed Avalanche Energy
Operating and Storage Temperature
Maximum lead temperature soldering purposes,
1/8” from case for 5 seconds
(Note 2)
FDP3651U
100
±20
80
320
255
266
-55 to 175
300
Unit
V
V
A
W
mJ
°C
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient, Max.
Thermal Resistance , Junction to Case, Max.
Package Marking and Ordering Information
Device Marking
FDP3651U
Device
FDP3651U
Reel Size
Tube
62
0.59
°C/W
°C/W
Tape Width
N/A
Quantity
50 units
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com

FDP3651U Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC=150°C
VGS = ±20V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
rDS(on)
Drain to Source On Resistance
VGS = VDS, ID = -250µA
VGS = 10V , ID = 80A
VGS = 10V , ID = 40A
VGS=10V, ID=40A,TJ=175oC
Dynamic Characteristics
Ciss
Coss
Crss
Qg(TOT)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
VDS = 25V,VGS = 0V
f=1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 80A
Resistive Switching Characteristics
t(on)
td(on)
tr
td(off)
tf
t(off)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 50V, ID = 80A
VGS = 10V, RGS = 5.0
Drain-Source Diode Characteristics
VSD
Source to Drain Diode
Forward Voltage
ISD = 80A
ISD = 40A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Is = 40 A, di/dt = 100A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=0.13mH, IAS = 64A, VDD=50V, RG=25 , Starting TJ=25oC
Min
100
-
-
-
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
-1
- 250
- ±100
4.5 5.5
15 18
13 15
32 37
4152
485
89
49
7
23
16
5522
728
118
69
9.8
-
-
- 64
15 27
16 29
32 52
14 26
- 78
0.99 1.25
0.88 1.0
70 105
202 303
Unit
V
µA
µA
nA
V
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
V
ns
nC
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDP3651U — N-Channel PowerTrench® MOS FET October 2013 FDP3651U N-Channel P owerTrench® MOSFET 100 V, 80 A, 18 mΩ Features • RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • High Perfo rmance Trench Technology for Extremely Low RDS(on) • Low Miller Charge • U IS Capability (Single Pulse and Repetit ive Pulse) Applications • Consumer A ppliances • Synchronous Rectification • Battery Protection Circuit • Mot or drives and Uninterruptible Power Sup plie s • Micro Solar Inverter D GD S G TO-220 S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbo l VDSS VGSS ID PD EAS TJ, TSTG TL Param eter Drain to Source Voltage Gate to So urce Voltage Drain Current - Continuous - Pulsed Power Dissipation Single Puls ed Avalanche Energy Operating and Stora ge Temperature Maximum lead temperature soldering purposes, 1/8” from case f or 5 seconds (Note 2) (Note 1) FDP3651U 100 ±20 80 320 255 266 -55 to 175 300 Unit V V A W mJ °C °C Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to A.
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