Optocoupler. SFH6106 Datasheet


SFH6106 Optocoupler. Datasheet pdf. Equivalent


Part Number

SFH6106

Description

Optocoupler

Manufacture

Vishay

Total Page 9 Pages
Datasheet
Download SFH6106 Datasheet


SFH6106
www.vishay.com
Alternative Device Available
SFH610A, SFH6106
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
SFH610A
A1
C2
4E
3C
SFH6106
A1
4E
C2
3C
i179056
DESCRIPTION
The SFH6 10A (D IP) and S FH6106 (SMD ) fe ature a high
current transfer ra tio, low co upling ca pacitance an d h igh
isolation volta ge. These c ouplers h ave a Ga As in frared
diode emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a pl astic
DIP-4 or SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage a nd clearance distan ces of > 8.0 mm a re
achieved with option 6. This version comp lies with
IEC 60 950 (DIN VDE 0 805) for re inforced i nsulation up to
an oper ation voltage of 40 0 VRMS or DC. Speci fications
subject to change.
FEATURES
• Good CTR linearity depending on forward
current
• Isolation test voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
• Fast switching times
• Low CTR degradation
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity
• Lead (Pb)-free component
• Material cat egorization: Fo r def initions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52 744 syste m code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDERING INFORMATION
PART
REMARKS
SFH610A-1
SFH610A-2
SFH610A-3
SFH610A-4
SFH610A-5
SFH6106-1
SFH6106-2
SFH6106-3
SFH6106-4
SFH6106-5T
SFH610A-1X006
SFH610A-1X018T
SFH610A-2X006
SFH610A-3X006
SFH610A-3X007
SFH610A-4X006
CTR 40 % to 80 %, DIP-4
CTR 63 % to 125 %, DIP-4
CTR 100 % to 200 %, DIP-4
CTR 160 % to 320 %, DIP-4
CTR 250 % to 500 %, DIP-4
CTR 40 % to 80 %, SMD-4
CTR 63 % to 125 %, SMD-4
CTR 100 % to 200 %, SMD-4
CTR 160 % to 320 %, SMD-4
CTR 250 % to 500 %, SMD-4, tape and reel
CTR 40 % to 80 %, DIP-4 400 mil
CTR 40 % to 80 %, SMD-4 400 mil, wide leadspread
CTR 63 % to 125 %, DIP-4 400 mil
CTR 100 % to 200 %, DIP-4 400 mil
CTR 100 % to 200 %, SMD-4
CTR 160 % to 320 %, DIP-4 400 mil
Note
• For additional information on the available options refer to option information.
Rev. 2.2, 23-May-13
1 Document Number: 83666
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com

SFH6106
www.vishay.com
Alternative Device Available
SFH610A, SFH6106
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between
emitter and detector
Comparative tracking index per DIN
IEC112/VDE 0303 part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature (1)
t 10 μs
tp 1.0 ms
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
max. 10 s, dip soldering distance
to seating plane 1.5 mm
VR
IF
IFSM
Pdiss
VCE
VEC
IC
IC
Pdiss
VISO
RIO
RIO
Tstg
Tamb
Tsld
6
60
2.5
100
70
7
50
100
150
5300
7m
7m
0.4
175
1012
1011
- 55 to + 150
- 55 to + 100
260
V
mA
A
mW
V
V
mA
mA
mW
VRMS
m
m
mm
°C
°C
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any othe r co nditions in exc ess of thos e given in the o perational sections o f this do cument. E xposure to a bsolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
IF = 60 mA
VR = 6 V
VR = 0 V, f = 1 MHz
VF
IR
CO
Rthja
Collector emitter capacitance
Thermal resistance
Collector emitter leakage current
VCE = 5 V, f = 1 MHz
VCE = 10 V
SFH610A-1
SFH6106-1
SFH610A-2
SFH6106-2
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
SFH610A-5
SFH6106-5T
CCE
Rthja
ICEO
ICEO
ICEO
ICEO
ICEO
ICEO
ICEO
ICEO
ICEO
ICEO
TYP.
1.25
0.01
13
750
5.2
500
2
25
25
25
5
5
5
5
5
5
MAX.
1.65
10
50
0
0
0
100
100
100
100
100
100
UNIT
V
μA
pF
K/W
pF
K/W
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
Rev. 2.2, 23-May-13
2 Document Number: 83666
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features Alternative Device Available SFH610A, S FH6106 www.vishay.com Vishay Semicondu ctors Optocoupler, Phototransistor Out put, High Reliability, 5300 VRMS SFH610 A A 1 4 3 FEATURES E C • Good CTR l inearity depending on forward current Isolation test voltage, 5300 VRMS High collector emitter voltage, VCEO = 70 V • Low saturation voltage • F ast switching times • Low CTR degrada tion • Temperature stable • Low cou pling capacitance • End stackable, 0. 100" (2.54 mm) spacing C 2 SFH6106 A 1 C 2 i179056 • High common mode int erference immunity 4 E 3 C • Lead (P b)-free component • Material cat egor ization: Fo r def initions of complianc e please see www.vishay.com/doc?99912 DESCRIPTION The SFH6 10A (D IP) and S F H6106 (SMD ) fe ature a high current tr ansfer ra tio, low co upling ca pacitan ce an d h igh isolation volta ge. These c ouplers h ave a Ga As in frared diod e emitter, which is optically coupled t o a silicon planar phototransistor detector, and is incorporated in a pl astic DIP-4 or.
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